MW5IC2030GNBR1 Freescale Semiconductor, MW5IC2030GNBR1 Datasheet - Page 8

• Manufacturer Part Number: MW5IC2030GNBR1
• Description: IC PWR AMP RF 26V 30W TO272-16GW
• Manufacturer: Freescale Semiconductor

Specifications of MW5IC2030GNBR1

• Current - Supply: 160mA
• Frequency: 1.93GHz ~ 1.99GHz
• Gain: 23dB
• Package / Case: TO-272-16 Gull Wing
• Rf Type: Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA
• Voltage - Supply: 26V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Test Frequency: -

MW5IC2030NBR1 MW5IC2030GNBR1
8
_
−85
27
26
25
24
23
22
21
20
−45
−50
−55
−60
−65
−70
−75
−80
Figure 17. Spectral Regrowth at 400 kHz and 600 kHz
−10
−20
−30
−40
−50
−60
1920
0
Figure 19. Insertion Phase versus Output Power
0
V
f1 = 1960 MHz, f2 = 1960.1 MHz, Two−Tone Measurements
V
I
I
f = 1960 MHz
EDGE Modulation
Figure 15. Power Gain versus Frequency
DQ1
DQ2
DD
SR @ 400 kHz
SR @ 600 kHz
DD
1930
= 27 Vdc, P
= 27 Vdc
= 160 mA
= 230 mA
1940
P
out
P
out
out
versus Output Power
, OUTPUT POWER (WATTS) AVG.
, OUTPUT POWER (WATTS) CW
= 5 W (CW), I
f, FREQUENCY (MHz)
1950
1
−30_C
T
C
T
C
= −30_C
= −30_C
25_C
85_C
1960
10
DQ1
= 160 mA, I
1970
85_C
10
85_C
25_C
25_C
25_C
1980
85_C
DQ2
TYPICAL CHARACTERISTICS
= 230 mA
T
1990
C
= −30_C
2000
100
100
1.E+09
1.E+08
1.E+07
1.E+06
8
6
4
2
0
Figure 20. MTTF Factor versus Junction Temperature
1
−40
−45
−50
−55
−60
−65
−70
−75
−80
V
I
I
f = 1960 MHz
90
DQ1
DQ2
Figure 16. EVM and Drain Efficiency versus
DD
22
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
= 27 Vdc
= 160 mA
= 230 mA
23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
V
I
f = 1960 MHz
N−CDMA IS−95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13)
DQ1
Figure 18. Single - Carrier N - CDMA ACPR,
100
DD
ALT2
ALT1
ACPR
ALT1 and ALT2 versus Output Power
1st Stage
= 27 Vdc
= 160 mA, I
P
out
110
, OUTPUT POWER (WATTS) AVG.
T
J
P
, JUNCTION TEMPERATURE (°C)
D
out
120
2
Output Power
, IS−95 OUTPUT POWER (dBm)
for MTTF in a particular application.
DQ2
T
C
= −30_C
= 230 mA
130
10
η
140
D
2nd Stage
Freescale Semiconductor
150
Source EVM = 0.60%
160
85_C
25_C
RF Device Data
170
180
100
2
40
30
20
10
0
190
40