MW7IC930NBR1 Freescale Semiconductor, MW7IC930NBR1 Datasheet - Page 2

• Manufacturer Part Number: MW7IC930NBR1
• Description: IC PWR AMP RF 900MHZ TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW7IC930NBR1

• Current - Supply: 340mA
• Frequency: 728MHz ~ 768MHz, 920MHz ~ 960MHz
• Gain: 36.8dB
• P1db: 31W
• Package / Case: TO-272-16
• Rf Type: W-CDMA
• Test Frequency: 940MHz
• Voltage - Supply: 32V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Package Type: TO-272 WB
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

2
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. V
(Case Temperature 80°C, 3.2 W CW)
(Case Temperature 80°C, 30 W CW)
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes -- AN1955.
schematic.
DS
DS
GS
DS
DS
DD
GG
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 3.3 x V
GS(Q)
D
DQ1
DQ1
GS
GS
DS
= 14 μAdc)
= 0 Vdc)
= 0 Vdc)
= 106 mA)
= 106 mA, Measured in Functional Test)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
Test Methodology
Characteristic
Test Methodology
(4)
Characteristic
(1,2)
Rating
(T
A
= 25°C unless otherwise noted)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
DQ1
DQ2
DQ1
DQ2
= 106 mA
= 285 mA
= 40 mA
= 340 mA
Symbol
Rating
V
V
V
I
I
I
GG(Q)
GS(th)
GS(Q)
DSS
DSS
GSS
3
Symbol
Symbol
V
R
V
V
T
P
T
DSS
T
θJC
stg
GS
DD
C
in
J
Min
Package Peak Temperature
1.2
6.9
—
—
—
—
1B (Minimum)
A (Minimum)
II (Minimum)
260
Typ
2.8
9.4
—
—
—
--65 to +150
2
Value
Class
--0.5, +65
--6.0, +10
32, +0
Value
150
225
5.5
1.6
5.8
1.2
20
Freescale Semiconductor
(2,3)
Max
11.9
2.7
10
—
1
1
RF Device Data
(continued)
°C/W
dBm
Unit
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Vdc
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C