MHVIC2114NR2 Freescale Semiconductor, MHVIC2114NR2 Datasheet - Page 6

• Manufacturer Part Number: MHVIC2114NR2
• Description: IC RF POWER AMP 2100MHZ 16-PFP
• Manufacturer: Freescale Semiconductor

Specifications of MHVIC2114NR2

• Current - Supply: 95mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 32dB
• P1db: 15W
• Package / Case: 16-PFP
• Rf Type: Cellular, CDMA2000, W-CDMA, PCS
• Voltage - Supply: 27V
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 2.6GHz
• Operating Supply Voltage (min): 26V
• Operating Supply Voltage (typ): 27V
• Operating Supply Voltage (max): 28V
• Package Type: PFP
• Mounting: Surface Mount
• Pin Count: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

6
MHVIC2114NR2
−30
−35
−40
−45
−50
−55
−60
−65
−20
−30
−40
−50
−60
−70
−80
−10
17
0
Figure 11. W - CDMA ACPR versus Output Power
Figure 13. Two - Tone Intermodulation Distortion
V
P
I
18
DQ1
V
3GPP Test Model 1
64 DPCH
DD
out
DD
10
19
= 7.5 W, Two−Tone Avg.
= 27 Vdc, f = 2140 MHz
= 96 mA, I
= 27 Vdc
2170 MHz
20
20
Products versus Tone Spacing
21
DQ2
30
22 23
P
out
= 204 mA, I
TONE SPACING (MHz)
, OUTPUT POWER (dBm)
40
24
2110 MHz
50
25
DQ3
26
60
4.5
4.4
4.3
4.2
4.1
3.9
3.8
3.7
3.6
3.5
= 111 mA
4
−40
27
V
I
70
GS3
−30 −20 −10
28
GS3
Figure 15. Gate Bias versus Temperature
2140 MHz
29
80
30
TYPICAL CHARACTERISTICS
90
31 32
V
R1 = R2 = R3 = 1000 Ohms
3rd Order
5th Order
7th Order
DD
0
100
= 27 Vdc, f = 2140 MHz
T, TEMPERATURE (C)
33
10 20 30 40 50 60 70 80 90
110
34
6.75
6.25
5.75
5.25
4.75
4.25
3.75
3.25
−20
−30
−40
−50
−60
−70
−80
−90
6.5
5.5
4.5
3.5
7
6
5
4
3
−40
2000
V
P
Tone Spacing = 100 kHz
V
V
V
Figure 14. Fixture Bias versus Temperature
DD
out
BIAS1
BIAS2
BIAS3
= 23 dBm Two−Tone Avg.
Distortion Products versus Frequency
= 27 Vdc
Figure 12. Two - Tone Intermodulation
−20
V
2050
I
GS1
GS1
3rd Order
5th Order
& V
& I
GS2
GS2
0
100
2100
f, FREQUENCY (MHz)
V
R1 = R2 = R3 = 1000 Ohms
T, TEMPERATURE (C)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
DD
0
= 27 Vdc, f = 2140 MHz
20
2150
40
Freescale Semiconductor
2200
60
RF Device Data
I
DQ3
2250
= 100 mA
80
111 mA
122 mA
122 mA
100 mA
111 mA
2300
100