MW7IC915NT1 Freescale Semiconductor, MW7IC915NT1 Datasheet - Page 4

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MW7IC915NT1

Manufacturer Part Number
MW7IC915NT1
Description
IC PWR AMP HV7 900MHZ 15W 24PQFN
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW7IC915NT1

Frequency
728MHz ~ 960MHz
Gain
38dB
P1db
15.5W
Package / Case
24-PQFN, 24-PowerQFN
Rf Type
W-CDMA
Voltage - Supply
28V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Supply
-
Noise Figure
-
Test Frequency
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW7IC915NT1
Manufacturer:
HITTITE
Quantity:
1 400
Part Number:
MW7IC915NT1
Manufacturer:
FREESCALE
Quantity:
20 000
MW7IC915NT1
4
Table 5. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Typical Performance — 700 MHz (In Freescale 700 MHz Test Fixture, 50 ohm system) V
1.6 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
P
IMD Symmetry @ 16 W PEP, P
VBW Resonance Point
Quiescent Current Accuracy over Temperature
Gain Flatness in 30 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
out
(V
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
with 2 kΩ Gate Feed Resistors (-30 to 85°C)
(-30 °C to +85°C)
(-30 °C to +85°C)
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
DD
@ 1 dB Compression Point, CW
= 28 Vdc, I
`
DQ1
30 dBc
= 75 mA, I
Characteristic
out
DQ2
Frequency
where IMD Third Order
728 MHz
748 MHz
768 MHz
= 100 mA)
(T
out
A
= 25°C unless otherwise noted) (continued)
= 1.6 W Avg.
(1)
Stage 1
Stage 2
DD
= 28 Vdc, I
Symbol
IMD
VBW
ΔP1dB
P1dB
ΔI
ΔG
G
QT
sym
F
DQ1
res
= 52 mA, I
(dB)
37.8
37.8
37.7
G
DD
ps
= 28 Vdc, I
Min
DQ2
= 134 mA, 865-895 MHz Bandwidth
PAE
17.2
17.3
17.3
(%)
DQ1
0.041
0.004
15.5
0.10
0.12
Typ
180
0.1
45
= 50 mA, I
Freescale Semiconductor
ACPR
(dBc)
-49.5
-50.5
-51.4
DQ2
Max
= 144 mA, P
RF Device Data
dBm/°C
dB/°C
(dB)
IRL
-23
-22
-22
MHz
MHz
Unit
dB
W
%
out
=

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