MMG3013NT1 Freescale Semiconductor, MMG3013NT1 Datasheet
MMG3013NT1
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MMG3013NT1 Summary of contents
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... Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched designed for a broad range of Class A, small - signal, high linearity, general purpose applica- tions suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF ...
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... Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure (1) Supply Current (1) Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3013NT1 Vdc, 900 MHz 25°C, 50 ohm system, in Freescale Application Circuit Symbol 900 MHz G ...
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... Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 RF Device Data Freescale Semiconductor Figure 1. Functional Diagram Class 1A (Minimum) A (Minimum) IV (Minimum) Rating Package Peak Temperature 1 260 Unit °C MMG3013NT1 3 ...
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... Figure 4. Small - Signal Gain versus Output Power 180 160 140 120 100 4.2 4.4 4.6 4 COLLECTOR VOLTAGE (V) CC Figure 6. Collector Current versus Collector Voltage MMG3013NT1 4 50 OHM TYPICAL CHARACTERISTICS 0 −10 −20 − Vdc CC − Figure 3. Input/Output Return Loss versus Vdc ...
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... Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power Vdc 900 MHz 1 MHz Tone Spacing − TEMPERATURE (_C) versus Case Temperature 125 130 135 140 145 T , JUNCTION TEMPERATURE (° Vdc Vdc mA 2140 MHz OUTPUT POWER (dBm) out MMG3013NT1 80 100 150 18 5 ...
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... Figure 15. S21, S11 and S22 versus Frequency Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 0.01 μF Chip Capacitors C3 0.1 μF Chip Capacitor C4 1 μF Chip Capacitor L1 470 nH Chip Inductor Chip Resistor MMG3013NT1 6 V SUPPLY R1 L1 DUT 0.403″ x 0.058″ Microstrip PCB Getek Grade ML200C, 0.031″ ...
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... Getek Grade ML200C, 0.031″, ε Figure 17. 50 Ohm Test Circuit Schematic Vdc 2800 3200 3600 Figure 19. 50 Ohm Test Circuit Component Layout Description C0603C151J5RAC C0603C104J5RAC C0603C105J5RAC HK160856NJ - T ERJ3GEY0R00V OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer Kemet Kemet Kemet Taiyo Yuden Panasonic MMG3013NT1 7 ...
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... MMG3013NT1 8 50 OHM TYPICAL CHARACTERISTICS ( Vdc mA 25°C, 50 Ohm System ∠ φ 11.479238 174.775 0.069393 11.415032 171.459 ...
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... MMG3013NT1 9 ...
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... Recommended Solder Stencil Figure 20. Recommended Mounting Configuration MMG3013NT1 10 7.62 1.27 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3013NT1 11 ...
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... MMG3013NT1 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MMG3013NT1 13 ...
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... Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz MMG3013NT1 14 PRODUCT DOCUMENTATION REVISION HISTORY ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MMG3013NT1 Rev. 6, 3/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...