MMG3015NT1 Freescale Semiconductor, MMG3015NT1 Datasheet

TRANS HBP 20.5DBM 15DB SOT-89

MMG3015NT1

Manufacturer Part Number
MMG3015NT1
Description
TRANS HBP 20.5DBM 15DB SOT-89
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MMG3015NT1

Current - Supply
95mA
Frequency
0Hz ~ 6GHz
Gain
15.5dB
Noise Figure
5.6dB
P1db
20.5dBm
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Rf Type
Cellular, PCS, PHS, WLL
Test Frequency
900MHz
Voltage - Supply
5V
Manufacturer's Type
Linear Amplifier
Number Of Channels
1
Supply Current
120@5VmA
Frequency (max)
6GHz
Operating Supply Voltage (typ)
5V
Package Type
SOT-89
Mounting
Surface Mount
Pin Count
3 +Tab
Noise Figure (typ)
5.6@900MHzdB
Rf Transistor Case
SOT-89
Peak Reflow Compatible (260 C)
Yes
Filter Terminals
SMD
Leaded Process Compatible
Yes
Output Third Order Intercept Point, Ip3
36dB
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMG3015NT1
MMG3015NT1TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMG3015NT1
Manufacturer:
Freescale Semiconductor
Quantity:
135
Part Number:
MMG3015NT1
Manufacturer:
FREESCALE
Quantity:
20 000
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
and output matched. It is designed for a broad range of Class A,
small - signal, high linearity, general purpose applications. It is suitable for
applications with frequencies from 0 to 6000 MHz such as Cellular, PCS,
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Table 1. Typical Performance
Table 3. Thermal Characteristics
Features
• Frequency: 0 - 6000 MHz
• P1dB: 20.5 dBm @ 900 MHz
• Small Signal Gain: 15.5 dB @ 900 MHz
• Third Order Output Intercept Point: 36 dBm @ 900 MHz
• Single 5 Volt Supply
• Active Bias
• Internally Matched to 50 Ohms
• Low Cost SOT - 89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
1. V
The MMG3015N is a General Purpose Amplifier that is internally Input
Small - Signal Gain
Input Return Loss
Output Return Loss
Power Output @1dB
Third Order Output
Thermal Resistance, Junction to Case
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Characteristic
(S21)
(S11)
(S22)
Compression
Intercept Point
Select Documentation/Application Notes - AN1955.
CC
= 5 Vdc, T
C
= 25°C, 50 ohm system
Symbol
P1db
ORL
IRL
IP3
G
p
(1)
MHz
15.5
20.5
900
- 15
- 13
Characteristic
36
(V
CC
2140
MHz
14.5
20.5
33.5
- 19
- 9
= 5 Vdc, I
3500
MHz
12.5
18.5
30.5
- 19
- 7
CC
= 95 mA, T
dBm
dBm
Unit
dB
dB
dB
C
= 25°C)
Table 2. Maximum Ratings
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
exceed 150°C.
Rating
Symbol
(2)
(2)
R
θJC
(3)
Document Number: MMG3015N
MMG3015NT1
CASE 1514 - 02, STYLE 1
0 - 6000 MHz, 15.5 dB
Symbol
Value
V
T
I
P
T
CC
InGaP HBT
CC
stg
41.5
in
J
20.5 dBm
PLASTIC
SOT - 89
1 2
(4)
3
- 65 to +150
Value
Rev. 0, 8/2007
300
150
12
MMG3015NT1
7
°C/W
Unit
Unit
dBm
mA
°C
°C
V
1

Related parts for MMG3015NT1

MMG3015NT1 Summary of contents

Page 1

... CC C Document Number: MMG3015N Rev. 0, 8/2007 MMG3015NT1 0 - 6000 MHz, 15.5 dB 20.5 dBm InGaP HBT CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC Rating Symbol Value ( (2) I 300 +150 stg (3) T 150 J (4) Symbol Value R 41.5 θJC MMG3015NT1 Unit V mA dBm °C °C Unit °C/W 1 ...

Page 2

... Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure (1) Supply Current (1) Supply Voltage 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3015NT1 Vdc, 900 MHz 25°C, 50 ohm system, in Freescale Application Circuit Symbol G p ...

Page 3

... Charge Device Model (per JESD 22 - C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Pin Function Number Ground 3 RF /DC Supply out Class 1C (Minimum) A (Minimum) IV (Minimum) Rating Package Peak Temperature 1 260 Unit °C MMG3015NT1 3 ...

Page 4

... Vdc OUTPUT POWER (dBm) out Figure 4. Small - Signal Gain versus Output Power 160 140 120 100 COLLECTOR VOLTAGE (V) CC Figure 6. Collector Current versus Collector Voltage MMG3015NT1 4 50 OHM TYPICAL CHARACTERISTICS 0 −5 −10 −15 −20 − Figure 3. Input/Output Loss versus Frequency 0 ...

Page 5

... Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power Vdc 900 MHz 1 MHz Tone Spacing − TEMPERATURE (_C) versus Case Temperature 125 130 135 140 145 T , JUNCTION TEMPERATURE (° Vdc Vdc mA 2140 MHz OUTPUT POWER (dBm) out MMG3015NT1 80 100 150 ...

Page 6

... Figure 15. S21, S11 and S22 versus Frequency Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 0.01 μF Chip Capacitors C3 0.1 μF Chip Capacitor C4 1 μF Chip Capacitor L1 470 nH Chip Inductor 1/10 W Chip Resistor MMG3015NT1 6 V SUPPLY R1 L1 DUT 0.403″ ...

Page 7

... Getek Grade ML200C, 0.031″, ε Figure 17. 50 Ohm Test Circuit Schematic Vdc 2800 3200 3600 Figure 19. 50 Ohm Test Circuit Component Layout Description OUTPUT 4 MMG30XX Rev 2 Part Number Manufacturer C0603C151J5RAC Kemet C0603C104J5RAC Kemet C0603C105J5RAC Kemet HK160856NJ - T Taiyo Yuden CRCW06030000ZKEA Vishay MMG3015NT1 7 ...

Page 8

... MMG3015NT1 8 50 OHM TYPICAL CHARACTERISTICS = 5 Vdc mA 255C, 50 Ohm System ∠ φ 6.17 171.48 0.08 6.16 169.36 0.08 6 ...

Page 9

... T = 255C, 50 Ohm System) (continued ∠ φ 4.34 48.07 0.09 4.30 45.96 0.09 4.27 44.53 0.09 4.23 42.83 0.09 4.20 41.14 0. ∠ φ ∠ φ 47.31 0.49 139.46 - 48.32 0.50 137.08 - 49.01 0.50 135.57 - 49.82 0.51 133.81 - 50.64 0.52 132.08 MMG3015NT1 9 ...

Page 10

... Recommended Solder Stencil Figure 20. Recommended Mounting Configuration MMG3015NT1 10 7.62 1.27 NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3015NT1 11 ...

Page 12

... MMG3015NT1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MMG3015NT1 13 ...

Page 14

... Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing The following table summarizes revisions to this document. Revision Date 0 Aug. 2007 • Initial Release of Data Sheet MMG3015NT1 14 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 15

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MMG3015NT1 15 ...

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