AMMP-6233-TR1G Avago Technologies US Inc., AMMP-6233-TR1G Datasheet - Page 2

• Manufacturer Part Number: AMMP-6233-TR1G
• Description: IC MMIC LNA 18GHZ-31GHZ 8SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of AMMP-6233-TR1G

• Rf Type: VSAT, DBS
• Gain: 23.2dB
• Current - Supply: 65mA
• Frequency: 18GHz ~ 32GHz
• Noise Figure: 2.6dB
• P1db: 8dBm
• Package / Case: 8-SMD
• Test Frequency: 18GHz
• Voltage - Supply: 3 V ~ 5 V
• Frequency Rf: 32GHz
• Noise Figure Typ: 2.6dB
• Supply Current: 65mA
• Supply Voltage Range: 3V To 5V
• Frequency Max: 32GHz
• Termination Type: SMD
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Frequency Min: 18GHz
• Number Of Channels: 1
• Frequency (max): 32GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 3V
• Single Supply Voltage (max): 5V
• Package Type: SMD
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 8
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Absolute Maximum Ratings
Notes:
1. Operation in excess of any of these conditions may result in per-
AMMP-6233 RF Specifications
TA= 25°C, Vdd=3.0 V, Idd= 65 mA, Zin=Zo=50 Ω
Notes:
4. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a nar-
6. All tested parameters guaranteed with measurement accuracy +/-0.5dB for NF and +/-1dB for gain at 18GHz, 26GHz and +/-1.5dB for gain at

Sym
Vd
Id
Pin
Tch
Tstg
Tmax Maximum Assembly Temp
Symbol
Freq
Gain
NF
Rlin
Rlout
Iso
P1dB
OIP3
manent damage to this device. The absolute maximum ratings for
Vd, Id and Pin were determined at an ambient temperature of 25°C
unless noted otherwise.
rower bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.
29GHz.
Parameters/Condition
Drain to Ground Voltage
Drain Current
RF CW Input Power Max
Max channel temperature
Storage temperature
Parameters and Test Conditions
Operational Frequency
RF Small Signal Gain
Noise Figure into 50Ω
Input Return Loss
Output Return Loss
Isolation
Output Power at 1dB gain compression
Output Third Order Intercept Point
(1)
(4,5,6)
Unit
V
mA
dBm
C
C
C
Max
5.5
100
10
+150
-65 +150
260 for 20s
Freq
18GHz
26GHz
29GHz
18GHz
26GHz
29GHz
DC Specifications/ Physical Properties
Notes:
2. Ambient operational temperature TA=25°C unless noted
3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as mea-
Sym
Idd
Vd
qjc
sured using infrared microscopy. Thermal Resistance at backside
temp. (Tb) = 25°C calculated from measured data.
Parameter and Test
Condition
Drain Supply Cur-
rent under any RF
power drive and temp.
(V
Drain Supply Voltage
Thermal Resistance
dd
=3.0 V)
Units
GHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
Min.
18
19
20.8
20
-10
-13
-45
8
18
(3)
Unit
mA
V
C/W
Typ.
23.2
24.4
23.6
2.6
2.2
2.6
(2)
Min
40
Typ
65
3
27
Max.
32
3.6
3.2
3.5
Max
90
5