MSA-0270 Avago Technologies US Inc., MSA-0270 Datasheet - Page 2

• Manufacturer Part Number: MSA-0270
• Description: AMP MMIC SI BIPOLAR 70MIL PKG
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of MSA-0270

• Gain: 11.5dB ~ 13.5dB
• Rf Type: ISM
• Current - Supply: 25mA
• Frequency: 0Hz ~ 2.8GHz
• Noise Figure: 6.5dB
• P1db: 4.5dBm
• Package / Case: 4-SMD (70 mil)
• Test Frequency: 1GHz
• Voltage - Supply: 4.5V ~ 5.5V
• Frequency Range: 0.1GHz To 3GHz
• Noise Figure Typ: 6.5dB
• Power Dissipation Pd: 325mW
• Supply Current: 40mA
• Supply Voltage Range: 4.5V To 5.5V
• Number Of Channels: 1
• Frequency (max): 25GHz
• Output Power: 4.5@1000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 4.5V
• Single Supply Voltage (typ): 5V
• Single Supply Voltage (max): 5.5V
• Package Type: Case 70
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 4
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MSA-0270 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8.3 mW/°C for T
4. The small spot size of this technique results in a higher, though more accurate determination
Electrical Specifications

Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following
Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
VSWR
G
∆G
f
NF
P
IP
t
V
dV/dT
3 dB
D
1 dB
d
P
3
of θ
page.
CASE
P
jc
than do alternate methods.
= 25°C.
[,3]
Parameters and Test Conditions: I
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
C
[1]
> 161°C.
, T
A
= 25°C
1
|

)
d
= 25 mA, Z
Absolute Maximum
–65 to 00°C
+13 dBm
35 mW
60 mA
00°C
O
= 50 Ω
f = 0.1 GHz
f = 0.1 to 1.8 GHz
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
[1]
Thermal Resistance
θ
jc
= 10°C/W
Units
mV/°C
dBm
dBm
psec
GHz
dB
dB
dB
V
Min.
11.5
[2,4]
4.5
:
Typ.
±0.6
1.4:1
1.4:1
–8.0
1.5
17.0
15
.8
6.5
4.5
5.0
Max.
±1.0
13.5
5.5