MGA-685T6-TR1G Avago Technologies US Inc., MGA-685T6-TR1G Datasheet - Page 2

• Manufacturer Part Number: MGA-685T6-TR1G
• Description: IC RF AMP LNA GAAS MMIC 6-UTSLP
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr

Specifications of MGA-685T6-TR1G

• Noise Figure: 0.9dB
• Package / Case: 6-XFDFN Exposed Pad
• Current - Supply: 10mA
• Frequency: 100MHz ~ 1.5GHz
• Gain: 19dB
• P1db: 17.3dBm
• Test Frequency: 500MHz
• Voltage - Supply: 3.3V
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Frequency: 1500 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 16 mA @ 3 V
• Maximum Power Dissipation: 600 mW
• Manufacturer's Type: Low Noise Amplifier
• Frequency (max): 1.5GHz
• Operating Supply Voltage (typ): 3V
• Package Type: UTSLP
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 0.93@500MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Rf Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 1. Absolute Maximum Rating
Notes:
1. Operation of this device above any one of there parameters may cause permanent damage.
2. Bias is assumed DC quiescent conditions.
3. With the DC (typical bias) and RF applied to the device at board temperature T
4. Total dissipation power is referred to board temperature, T
5. Thermal resistance is measured from junction to board using IR method.
Table 2. Electrical Specifi cations
T
Notes:
1. Circuit losses have been de-embedded from actual measurements.
2. Measurement in table 2 uses the test board and circuit schematic shows in fi gure 1a. Data based on 500 part sample size from two wafer lots
3. 0.5 GHz OIP3 Test Condition : F1 = 0.5 GHz, F2 = 0.505 GHz, Pin = -20 dBm
2
Symbol
Vd
Id
P
I
P
T
T
θ
Symbol
Id
NF
Gain
OIP3
P1dB
IRL
ORL
A
ref
diss
CH
STG
in,max
ch_b
= 25 °C, Freq = 0.5 GHz, Vd = 3V (unless otherwise specifi ed)
during initial characterization of this product.
[1,2]
[1,2]
[1,2]
[1,2]
[1,2]
[1,2,3]
[1,2]
Parameter
Device Current
Noise Figure in test circuit
Associated Gain in test circuit
Output 3rd Order Intercept in test circuit
Output Power at 1dB Gain Compression in test
circuit
Input Return Loss in test circuit
Output Return Loss in test circuit
Parameter
Device Voltage (Pin 5)
Device Current (Pin 5)
CW RF Input Power (Pin 2)
Bias Reference Current (Pin 6)
Total Power Dissipation
Channel Temperature
Storage Temperature
Thermal Resistance
[5]
[2]
[2]
[1]
[4]
[3]
B
= 92 °C, derate P
Units
mA
dB
dB
dBm
dBm
dB
dB
Units
V
mA
dBm
mA
mW
°C
°C
°C / W
diss
B
= 25 °C.
at 10 mW/ °C for T
Absolute Max.
6
100
+21
12
600
150
150
97
Min.
7
-
17.50
16.50
-
-
-
B
> 92 °C.
Typ
10
0.93
18.90
18.70
17.30
-8.10
-16.40
Max.
16
1.50
20.50
-
-
-
-