MGA-635T6-TR1G Avago Technologies US Inc., MGA-635T6-TR1G Datasheet - Page 2

IC AMP GPS LNA 0.9-2.4GHZ 6UTSLP

MGA-635T6-TR1G

Manufacturer Part Number
MGA-635T6-TR1G
Description
IC AMP GPS LNA 0.9-2.4GHZ 6UTSLP
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of MGA-635T6-TR1G

Rf Type
ISM, GPS, 802.16/WiMax
Gain
12.5dB ~ 14.5dB
Current - Supply
6.3mA ~ 10mA
Frequency
900MHz ~ 2.4GHz
Noise Figure
0.74dB ~ 1.3dB
P1db
2.5dBm
Package / Case
6-UTSLP
Test Frequency
1.575GHz
Voltage - Supply
2.85V
Frequency Rf
2.4GHz
Noise Figure Typ
0.74dB
Supply Current
6.3mA
Power Dissipation Pd
54mW
Supply Voltage Range
1V To 3.6V
Frequency Max
2.4GHz
Filter Terminals
SMD
Frequency Min
0.9GHz
Frequency Range
0.9GHz To 2.4GHz
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGA-635T6-TR1G
Manufacturer:
TI
Quantity:
91 800
Part Number:
MGA-635T6-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Absolute Maximum Rating
Thermal Resistance
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Assuming DC quiescent conditions
3. Thermal resistance measured using Infra-Red measurement technique.
4. Board (module belly) temperature TB is 25 qC. Derate 14mW/ qC for TB>146 qC.
Product Consistency Distribution Charts
Figure1. Gain @ 1.575GHz; LSL = 12.5dB, Nominal = 14.5dB, USL=16.3dB
Figure3. Ids @ 1.575GHz; Nominal = 6.3mA, USL = 10mA
Note:
5. Distribution data sample size is 5000 samples taken from 2 different non-consecutive wafer lots. Future wafers allocated to this product may
6. Measurements are made on a production test board, which can show a variance of up to 1dB in gain and OIP3 compared to a soldered-down
2
3
Symbol
Vdd
Ids
P
P
T
T
in,max
diss
j
STG
have nominal values anywhere between the upper and lower limits.
demo board. Input trace losses have been de-embedded from actual measurements.
13
4
5
Parameter
Device Drain to Source Voltage
Drain Current
CW RF Input Power (Vdd = 2.85V, Ids=4.9mA)
Total Power Dissipation
Junction Temperature
Storage Temperature
14
[3]
6
(Vdd = 2.85V, Ids = 4.9mA), Tjc = 73 qC/W
[1]
[2]
7
15
T
A
=25qC
stdev=0.42
stdev=0.96
8
[4]
[5,6]
16
9
[2]
10
Figure2. NF @ 1.575GHz; Nominal = 0.74dB, USL=1.3dB
.5
.6
Units
V
mA
dBm
mW
°C
°C
.7
.8
Absolute Max.
3.6
15
+10
54
150
-65 to 150
.9
stdev=0.06
1
1.1
1.2
1.3

Related parts for MGA-635T6-TR1G