ABA-54563-TR1G Avago Technologies US Inc., ABA-54563-TR1G Datasheet - Page 2

• Manufacturer Part Number: ABA-54563-TR1G
• Description: IC AMP RFIC 3.4GHZ 5V SOT-363
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr

Specifications of ABA-54563-TR1G

• P1db: 16.1dBm
• Noise Figure: 4.4dB ~ 4.8dB
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 79mA
• Frequency: 0Hz ~ 3.4GHz
• Gain: 23dB
• Rf Type: ISM, Cordless Phones, PCS, 802.16/WiMax, DBS Broadcast Television, TVRO
• Test Frequency: 2GHz
• Voltage - Supply: 4.5V ~ 5.5V
• Mounting Style: SMD/SMT
• Technology: Monolithic Amplifier
• Number Of Channels: 1
• Operating Frequency: 3400 MHz
• Operating Supply Voltage: 5 V
• Supply Current: 90 mA @ 5 V
• Maximum Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Manufacturer's Type: Broadband Amplifier
• Frequency (max): 3.4GHz
• Operating Supply Voltage (typ): 5V
• Package Type: SOT-363
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 4.4@2000MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1495-2

2
ABA-54563 Absolute Maximum Ratings
θ
Product Consistency Distribution Charts at 5.0V and 2 GHz.
Note:
1. Measured on the production test circuit base on 500 samples.
Symbol
V
P
P
T
T
cc
diss
j
STG
in
j-c
Figure 1. S21 Distribution.
Figure 4. OIP3 Distribution.
100
80
60
40
20
80
60
40
20
0
0
21.8
26.5
22.2
27
Parameter
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power
Total Power Dissipation
Thermal Resistance
Junction Temperature
Storage Temperature
22.6
27.5
OIP3 (dBm)
S21 (dB)
23
28
[2]
23.4
28.5
[3]
23.8
29
[1]
Figure 2. P1dB Distribution.
80
60
40
20
0
15.3
15.6
Units
V
dBm
mW
°C/W
°C
°C
15.9
P1dB (dBm)
[1]
RF Input
Figure 5. Test circuit at of the 2 GHz production test board used for NF, Gain and OIP3
measurements. Circuit losses have been de-embedded from actual measurements.
Absolute Max.
6
20
560
110
150
-65 to 150
16.2
16.5
C
1 nF
block
16.8
1. Operation of this device in excess of any
2. Thermal resistance measured using 150°C
3. Case temperature Tc at 25°C. Derate at
Notes:
Figure 3. Noise Figure Distribution.
120
100
of these limits may cause permanent
damage.
Liquid Crystal Measurement method.
9.1mW/°C for Tc > 87.5°C.
80
60
40
20
0
3.6
C
bypass
100 pF
4
NF (dB)
33 nH
C
RFC
4.4
1 nF
block
1000 pF
C
bypass
4.8
RF Output
Vcc
5.2