ADA-4643-BLKG Avago Technologies US Inc., ADA-4643-BLKG Datasheet - Page 2

• Manufacturer Part Number: ADA-4643-BLKG
• Description: IC AMP DARL SI BIPOLAR SOT-343
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr

Specifications of ADA-4643-BLKG

• P1db: 13.4dBm
• Noise Figure: 4dB
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Current - Supply: 35mA
• Frequency: 0Hz ~ 2.5GHz
• Gain: 15.5dB ~ 18.5dB
• Rf Type: Cellular, PCS, WLL, WLAN
• Test Frequency: 900MHz
• Voltage - Supply: 3.2V ~ 3.9V
• Bandwidth: 3200 MHz
• Mounting Style: SMD/SMT
• Technology: Gain Amplifier
• Number Of Channels: 1
• Operating Frequency: 2500 MHz
• Operating Supply Voltage: 3.5 V
• Supply Current: 60 mA
• Maximum Power Dissipation: 270 mW
• Frequency (max): 2.5GHz
• Operating Supply Voltage (min): 3.2V
• Operating Supply Voltage (typ): 3.5V
• Operating Supply Voltage (max): 3.9V
• Package Type: SOT-343
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Noise Figure (typ): 4@900MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1841; ADA-4643-BLKG

2
ADA-4643 Absolute Maximum Ratings
P
P
T
T
ADA-4643 Electrical Specifications
T
Symbol
V
Gp
∆Gp
F
VSWR
VSWR
NF
P
OIP
DV/dT
Notes:
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3. I) 900 MHz OIP
Input
Block diagram of 900 MHz production test board used for V
Circuit losses have been de-embedded from actual measurements.
Symbol
I
θ
d
3dB
j
STG
d
diss
in max.
A
1dB
jc
II) 100 MHz OIP
= 25°C, Zo=50Ω, Pin = -25 dBm, I
3
in
out
Transmission
(0.5 dB loss)
50 Ohm
Parameter and Test Condition:
I
Device Voltage I
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Input Voltage Standing Wave Ratio
Output Voltage Standing Wave Ratio
50Ω Noise Figure
Output Power at 1dB Gain Compression
Output 3
Device Voltage Temperature Coefficient
d
3
3
Parameter
Device Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
= 35 mA, Zo = 50Ω
test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone.
test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone.
rd
Order Intercept Point
21
d
= 35 mA
|
2
[3]
d
= 35 mA (unless specified otherwise)
[2]
[1]
DUT
Units
mA
mW
dBm
°C
°C
°C/W
d
, Gain, P
Frequency
100 MHz
900 MHz
100 to 900 MHz
0.1 to 2 GHz
0.1 to 6 GHz
0.1 to 6 GHz
100 MHz
900 MHz
100 MHz
900 MHz
100 MHz
900 MHz
1dB
, OIP
[1,2]
[1,2]
[1,2]
[3]
[1,2,3]
3
including Bias
Transmission
, and NF measurements.
(0.5 dB loss)
Absolute
Maximum
270
18
150
-65 to 150
152
70
50 Ohm
Units
V
dB
dB
GHz
dB
dBm
dBm
mV/°C
Output
Notes:
1. Operation of this device above any one of
2. Ground lead temperature is 25°C.
3. Junction-to-case thermal resistance
Min.
3.2
15.5
these parameters may cause permanent
damage.
Derate 6.6 mW/°C for TL >109°C.
measured using 150°C Liquid Crystal
Measurement method.
Typ.
3.5
17.5
17.0
0.5
1.8
3.2
2.0:1
1.6:1
3.9
4.0
14.7
13.4
29.0
28.3
-5.3
Max.
3.9
18.5
Std. Dev.
0.07
0.1