BGA 428 E6327 Infineon Technologies, BGA 428 E6327 Datasheet - Page 5

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BGA 428 E6327

Manufacturer Part Number
BGA 428 E6327
Description
IC OP AMP HG LNA RF SOT363
Manufacturer
Infineon Technologies
Type
General Purpose Amplifierr
Datasheet

Specifications of BGA 428 E6327

Noise Figure
1.4dB
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
12mA
Frequency
1.4GHz ~ 2.5GHz
Gain
20dB
P1db
-19dBm
Rf Type
Cellular, GSM, DCS, PCS
Test Frequency
1.8GHz
Voltage - Supply
2.4V ~ 3V
Mounting Style
SMD/SMT
Number Of Channels
1
Operating Frequency
1850 MHz
Supply Current
8.2 mA (Typ) @ 2.7 V
Maximum Power Dissipation
50 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BGA 428 E6327
BGA428E6327INTR
BGA428E6327XT
SP000012971
Maximum Ratings
Table 1
Parameter
Device voltage
Voltage at pin Out
Voltage at pin GS
Current into pin In
Total device current
Input power
Total power dissipation,
Junction temperature
Operating temperature range
Storage temperature range
1)
2) Valid for:
3)
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Junction - soldering point
1) For calculation of
Data Sheet
I
a)
b)
T
tot
S
Z
Z
is measured on the ground lead at the soldering point
= Current into Out + Current into
L
L
= 50 ,
= 50 ,
2)
Maximum ratings
Thermal resistance
Z
Z
S
S
= 50
= 50
R
1)
thJA
please refer to Application Note Thermal Resistance
T
1)
V
V
S
CC
CC
< 125 °C
= 2.7 V,
= 0.0 V,
V
3)
V
V
CC
out
out
Symbol
V
V
V
I
I
P
P
T
T
T
Symbol
R
= 2.7 V,
= 0.0 V,
in
tot
J
OP
STG
CC
out
GS
in
tot
thJS
V
V
GS
GS
= 0.0 V,
= 2.7 V,
5
GND
GND
Silicon Germanium Broadband MMIC Amplifier
Limit Value
4
4
3.5
0.5
12
8
50
150
-40... 85
-65... 150
Value
220
= 0.0 V
= 0.0 V
Unit
V
V
V
mA
mA
dBm
mW
°C
°C
°C
Unit
K/W
Rev. 2.2, 2007-11-06
BGA428

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