SGA-4586Z Sirenza Microdevices Inc, SGA-4586Z Datasheet - Page 2

IC AMP HBT SIGE 4000MHZ SOT-86

SGA-4586Z

Manufacturer Part Number
SGA-4586Z
Description
IC AMP HBT SIGE 4000MHZ SOT-86
Manufacturer
Sirenza Microdevices Inc
Datasheet

Specifications of SGA-4586Z

Current - Supply
41mA ~ 49mA
Frequency
0Hz ~ 4GHz
Gain
17.9dB
Noise Figure
1.9dB
P1db
13.7dBm
Package / Case
SOT-86
Rf Type
Cellular, GSM, PCS, UMTS
Test Frequency
1.95GHz
Voltage - Supply
3.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
599-1037-2

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SGA-4586(Z)
Typical Performance at Key Operating Frequencies
2 of 6
Absolute Maximum Ratings
Max Device Current (I
Max Device Voltage (V
Max RF Input Power
Max Junction Temp (T
Operating Temp Range (T
Max Storage Temp
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
J
Parameter
-T
Output Power at 1dB Compression
Output Third Order Intercept Point
L
)/R
35
30
25
20
15
S
TH
=8V, I
0
Output Return Loss
, j-l
Small Signal Gain
Input Return Loss
D
J
Reverse Isolation
D
)
)
Parameter
)
Noise Figure
D
L
)
=45mA Typ., OIP
0.5
OIP
V
D
1
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
= 3.2 V, I
Frequency (GHz)
3
vs. Frequency
1.5
3
Tone Spacing=1MHz, P
D
= 45 mA
-40 to +85
5
4
3
2
1
0
Rating
2
+150
+150
+18
0
90
5
T
L
=+25ºC
2.5
Noise Figure vs. Frequency
0.5
Unit
dBm
dBm
dB
dB
dB
dB
dB
V
3
D
OUT
= 3.2 V, I
1
Frequency (GHz)
per tone=-5dBm, R
Unit
dBm
mA
°C
°C
°C
V
1.5
MHz
100
18.1
18.5
30.1
D
= 45 mA
18
16
14
12
10
8
2
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
0
MHz
500
26.2
16.3
14.9
20.6
28.4
T
27.7
BIAS
1.7
L
=+25ºC
2.5
0.5
=100Ω, T
Caution! ESD sensitive device.
P
V
1dB
D
= 3.2 V, I
MHz
850
1
3
24.0
28.6
16.5
15.0
24.4
26.6
Frequency (GHz)
1.7
vs. Frequency
L
=25°C, Z
1.5
D
= 45 mA
1950
S
MHz
=Z
18.0
26.0
14.0
19.4
21.2
21.5
1.9
L
2
=50Ω
T
L
=+25ºC
2.5
2400
MHz
16.3
26.3
12.7
19.8
18.3
19.3
2.3
EDS-101266 Rev E
3
3500
MHz
16.1
16.1
15.8

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