MGA-62563-TR1G Avago Technologies US Inc., MGA-62563-TR1G Datasheet - Page 4

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MGA-62563-TR1G

Manufacturer Part Number
MGA-62563-TR1G
Description
IC AMP MMIC LNA 500MHZ SOT-363
Manufacturer
Avago Technologies US Inc.
Type
General Purpose Amplifierr
Datasheet

Specifications of MGA-62563-TR1G

P1db
18dBm
Noise Figure
0.8dB
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
47mA ~ 77mA
Frequency
100MHz ~ 3GHz
Gain
22dB
Test Frequency
500MHz
Voltage - Supply
3 V ~ 5 V
Mounting Style
SMD/SMT
Technology
Low Noise Amplifier
Number Of Channels
1
Operating Frequency
3000 MHz
Operating Supply Voltage
3 V
Supply Current
77 mA @ 3 V
Maximum Power Dissipation
600 mW
Package
6SOT-363
Number Of Channels Per Chip
1
Typical Output Power
17.7@3000MHz dBm
Typical Power Gain
22@500MHz dB
Maximum Operating Frequency Range
3000 to 5000 MHz
Typical Noise Figure
1.5@3000MHz dB
Typical Output Intercept Point
31@3000MHz dBm
Manufacturer's Type
Low Noise Amplifier
Frequency (max)
3.5GHz
Operating Supply Voltage (typ)
3V
Package Type
SOT-363
Mounting
Surface Mount
Pin Count
6
Noise Figure (typ)
1.5@3000MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rf Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
516-1828-2
MGA-62563-TR1G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MGA-62563-TR1G
Manufacturer:
AVAGO
Quantity:
30 000
Part Number:
MGA-62563-TR1G
Manufacturer:
AVAGO
Quantity:
25 000
Part Number:
MGA-62563-TR1G
Manufacturer:
ST
0
Part Number:
MGA-62563-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Part Number:
MGA-62563-TR1G
0
MGA-62563 Electrical Specifications
T
Symbol
Id
NF
G
OIP3
NF
|S
OIP3
P1dB
Notes:
1. Guaranteed specifications are 100% tested in the production test circuit as shown in Figure 1, the typical value is based on measurement of at
2. Circuit achieved a trade-off between optimal NF, Gain, OIP3 and input return loss.
3. Parameter quoted at 50: is based on measurement of selected typical parts tested on a 50: input and output test fixture.
4
C
test
21
[1,2]
least 500 parts from three non-consecutive wafer lots during initial characterization of this product.
test
50ý
= 25°C, Z
|
2
test
50ý
[1,2]
50ý
50ý
[3]
[1,2]
[3]
[3]
[1,2]
[3]
O
= 50:, V
Parameters and Test Conditions
Device Current
Noise Figure in test circuit
Associated Gain in test circuit
Ouput 3
Noise Figure in 50: system
Associated Gain in 50: system
Output 3
Output Power at 1dB Gain Compression in 50: system
d
rd
rd
= 3V (unless otherwise specified)
Order Intercept in test circuit
Order Intercept Point in 50: system f = 0.1 GHz
[1]
[1]
[1]
Freq
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.2 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 3.0 GHz
f = 0.1 GHz
f = 0.2 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 3.0 GHz
f = 0.2 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 3.0 GHz
f = 0.2 GHz
f =0.5 GHz
f = 1.0 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.5 GHz
f = 3.0 GHz
Units
mA
dB
dB
dBm
dB
dB
dBm
f = 0.1 GHz
Min.
47
20.4
30
Typ.
62
0.93
22
32.9
1.1
1.0
0.8
0.9
1.0
1.2
1.3
1.5
23.5
23
22
20
17
15.5
14
13
34.7
34.7
34.8
33.5
33
32.3
32
31
dBm
18
18
17.6
17.6
17.7
17.9
17.7
77
1.4
23.4
Max.
Std Dev
2.09
0.06
0.36
0.51
0.06
0.36
0.51
18

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