MC68908GZ8MFAE Freescale Semiconductor, MC68908GZ8MFAE Datasheet - Page 40

• Manufacturer Part Number: MC68908GZ8MFAE
• Description: IC MCU 8BIT 8K FLASH 48-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68908GZ8MFAE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: CAN, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-LQFP
• Processor Series: M689xx
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: SPI, SCI, CAN
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 37
• Number Of Timers: 2
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05AE, DEMO908GZ60E, M68EML08GZE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 16 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Memory
2.6.3 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory to read as logic 1. A page
consists of 64 consecutive bytes starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 44-byte
user interrupt vectors area also forms a page. Any FLASH memory page can be erased alone.
In applications that need more than 1000 program/erase cycles, use the 4-ms page erase specification
to get improved long-term reliability. Any application can use this 4-ms page erase specification.
However, in applications where a FLASH location will be erased and reprogrammed less than 1000 times,
and speed is important, use the 1-ms page erase specification to get a shorter cycle time.
40
10. After a time, t
1. Set the ERASE bit, and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the page address range of the block to be desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Programming and erasing of FLASH locations cannot be performed by
code being executed from FLASH memory. While these operations must be
performed in the order shown, other unrelated operations may occur
between the steps.
RCV
NVS
Erase
NVH
(typical 1 μs), the memory can be accessed in read mode again.
(minimum 10 μs)
(minimum 5 μs)
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 4
(minimum 1 ms or 4 ms)
NOTE
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