NDF11N50ZG ON Semiconductor, NDF11N50ZG Datasheet

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NDF11N50ZG

Manufacturer Part Number
NDF11N50ZG
Description
MOSFET N-CH 500V .52OHM TO-220FP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NDF11N50ZG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
1375pF @ 25V
Power - Max
36W
Mounting Type
Through Hole
Package / Case
TO-220FP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDF11N50ZG
NDF11N50ZGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDF11N50ZG
Manufacturer:
ON
Quantity:
2 550
Part Number:
NDF11N50ZG
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NDF11N50ZG
Quantity:
31
NDF11N50Z, NDP11N50Z
N-Channel Power MOSFET
500 V, 0.52 W
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq
2. Limited by maximum junction temperature
3. I
ABSOLUTE MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 1
Drain−to−Source Voltage
Continuous Drain Current,
Continuous Drain Current
Pulsed Drain Current,
Power Dissipation, R
Gate−to−Source Voltage
Single Pulse Avalanche
ESD (HBM)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T
Peak Diode Recovery
Continuous Source Cur-
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
A
[2 oz] including traces).
d
R
T
V
(Note 1)
Energy, I
(JESD22−A114)
rent (Body Diode)
= 25°C) (Figure 14)
≤ 10.5 A, di/dt ≤ 200 A/ms, V
A
GS
qJC
= 100°C, R
@ 10 V
Rating
D
= 10 A
qJC
qJC
Symbol
T
V
V
dv/dt
V
J
V
DD
E
I
P
DSS
T
, T
I
I
DM
ISO
I
esd
GS
AS
D
D
S
D
L
stg
≤ BV
(T
DSS
C
NDF11N50Z
6.7 (Note 2)
42 (Note 2)
10.5 (Note
= 25°C unless otherwise noted)
, T
4500
36
2)
J
≤ 150°C.
4.5 (Note 3)
−55 to 150
4000
10.5
500
±30
420
260
NDP11N50Z
10.5
145
6.7
42
1
V/ns
Unit
mJ
°C
°C
W
V
A
A
A
V
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
V
500 V
DSS
CASE 221D
CASE 221A
TO−220FP
STYLE 1
STYLE 5
TO−220
ORDERING INFORMATION
A
Y
WW
G
http://onsemi.com
G (1)
= Location Code
= Year
= Work Week
= Pb−Free Package
R
DS(ON)
Publication Order Number:
Gate
NDP11N50ZG
(MAX) @ 4.5 A
0.52 Ω
NDF11N50ZG
MARKING
DIAGRAM
N−Channel
AYWW
Drain
D (2)
or
NDF11N50Z/D
Source
S (3)

Related parts for NDF11N50ZG

NDF11N50ZG Summary of contents

Page 1

... J 1 http://onsemi.com V R (MAX) @ 4.5 A DSS DS(ON) 500 V 0.52 Ω N−Channel D (2) G (1) TO−220FP CASE 221D MARKING STYLE 1 DIAGRAM NDF11N50ZG or NDP11N50ZG AYWW Gate TO−220 CASE 221A STYLE 5 Drain A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet ...

Page 2

THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State (Note 4) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance ...

Page 3

6 6 5 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 1.00 0.95 0.90 0.85 0.80 0.75 0.70 ...

Page 4

T = 150° 125° 0 100 150 200 250 300 350 400 450 500 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Drain−to−Source Leakage Current versus Voltage 1000 V = 250 ...

Page 5

... Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TYPICAL CHARACTERISTICS 100 ms ...

Page 6

... ORDERING INFORMATION Order Number NDF11N50ZG NDP11N50ZG Package TO−220FP (Pb−Free) TO−220AB (Pb−Free) http://onsemi.com 6 Shipping 50 Units / Rail 50 Units / Rail (In Development) ...

Page 7

... Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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