IRF7478 International Rectifier, IRF7478 Datasheet

MOSFET N-CH 60V 7A 8-SOIC

IRF7478

Manufacturer Part Number
IRF7478
Description
MOSFET N-CH 60V 7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7478

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 4.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 4.5V
Input Capacitance (ciss) @ Vds
1740pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7478

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Price
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Benefits
Thermal Resistance
Applications
Absolute Maximum Ratings
www.irf.com
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
Notes
D
D
DM
J
STG
D
GS
@ T
@ T
JL
JA
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design, (See
are on page 8
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
60V
DSS
1
2
3
4
T o p V ie w
Typ.
300 (1.6mm from case )
–––
–––
R
HEXFET
DS(on)
8
7
6
5
-55 to + 150
30@V
26@V
Max.
0.02
± 20
7.0
5.6
2.5
3.7
56
D
D
D
D
A
A
GS
max (m
GS
®
= 4.5V
= 10V
Power MOSFET
Max.
20
50
IRF7478
SO-8
PD- 94055A
3.5A
4.2A
I
Units
Units
D
W/°C
°C/W
V/ns
°C
W
A
V
1
3/13/01

Related parts for IRF7478

IRF7478 Summary of contents

Page 1

... SMPS MOSFET HEXFET V R DSS DS(on) 60V 30 10V GS @ 10V GS - 150 300 (1.6mm from case ) Typ. ––– ––– PD- 94055A IRF7478 ® Power MOSFET max ( 26@V = 10V 4. 4.5V 3. SO-8 Max. Units 7.0 5 2.5 W 0.02 W/°C ± 3.7 V/ns ° ...

Page 2

... IRF7478 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP BOTTOM 10 ° 1 0.1 100 V Fig 2. Typical Output Characteristics 2.5 7. 2.0 1.5 1.0 0.5 0.0 3.5 4.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7478 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.7V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 10V GS ...

Page 4

... IRF7478 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 C ° ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage MHZ D SHORTED 100 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7478 D.U. µ d(off ...

Page 6

... IRF7478 0.028 0.026 0.024 4.5V 0.022 0.020 0.018 0.016 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 20V Fig 15a&b. Unclamped Inductive Test circuit ...

Page 7

... SO-8 Package Details (. (. ( (. SO-8 Part Marking www.irf.com ° (. IRF7478 ILLIM .05 32 .06 88 1 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3. .635 .22 84 .244 0 5.8 0 6.20 K .01 1 ...

Page 8

... IRF7478 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO DIM E NS ION S ARE SHO ILL IM E TER S (INC & ING SIO ILLIME TER . TLIN IA-48 1 & -54 1. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T = 25° 16mH ...

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