IRFH5025TRPBF International Rectifier, IRFH5025TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5025TRPBF
• Description: MOSFET N-CH 250V 3.8A PQFN56
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5025TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 5V @ 150µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2150pF @ 50V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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240
200
160
120
80
40
Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
4
Fig 15a. Switching Time Test Circuit
V GS , Gate-to-Source Voltage (V)
R G
20V
V DS
8
t p
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
12
L
T J = 125°C
T J = 25°C
16
I D = 5.7A
15V
DRIVER
+
-
+
-
20
V DD
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
90%
V
10%
V
I
DS
AS
1400
1200
1000
GS
800
600
400
200
Fig 15b. Switching Time Waveforms
0
25
t
d(on)
Starting T J , Junction Temperature (°C)
50
t
t p
r
75
t
d(off)
V
(BR)DSS
100
t
f
TOP
BOTTOM
125
1.2A
0.8A
I D
5.7A
5
150