SUD35N10-26P-GE3 Vishay, SUD35N10-26P-GE3 Datasheet

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SUD35N10-26P-GE3

Manufacturer Part Number
SUD35N10-26P-GE3
Description
MOSFET N-CH D-S 100V DPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUD35N10-26P-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
26 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
4.4V @ 250µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
2000pF @ 12V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
26mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SUD35N10-26P-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD35N10-26P-GE3
Manufacturer:
NXP
Quantity:
7 204
Part Number:
SUD35N10-26P-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 50 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 69796
S-80184-Rev. A, 04-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
100
Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free)
(V)
C
= 25 °C.
G
Top View
TO-252
0.026 at V
D
r
DS(on)
S
GS
(Ω)
J
= 10 V
= 175 °C)
b, d
Drain Connected to Tab
N-Channel 100-V (D-S) MOSFET
I
D
35
(A)
a
A
= 25 °C, unless otherwise noted
Q
Steady State
31 nC
L = 0.1 mH
g
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ)
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• 100 % UIS Tested
• Primary Side Switch
G
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
N-Channel MOSFET
I
I
AS
thJA
thJC
GS
DS
AS
D
S
D
stg
D
S
®
Power MOSFET
Typical
1.5
15
- 55 to 175
6.9
8.3
5.8
Limit
12
10
± 20
100
50
35
32
40
33
55
83
58
b, c
b, c
b, c
b, c
b, c
e
SUD35N10-26P
Maximum
1.8
18
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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SUD35N10-26P-GE3 Summary of contents

Page 1

... DS(on) 0.026 100 GS TO-252 Drain Connected to Tab Top View Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy ...

Page 2

... SUD35N10-26P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 69796 S-80184-Rev. A, 04-Feb-08 New Product 2.0 2.5 3.0 2500 2000 1500 1000 SUD35N10-26P Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C 500 oss C rss Drain-to-Source Voltage (V) DS Capacitance 2.2 ...

Page 4

... SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 4.5 4 250 µA D 3.5 3.0 2.5 2.0 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.08 0.06 0.04 0. °C J 0.00 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69796 S-80184-Rev. A, 04-Feb-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SUD35N10-26P Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... SUD35N10-26P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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