SUD06N10-225L-E3 Vishay, SUD06N10-225L-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD06N10-225L-E3
• Description: MOSFET N-CH 100V 6.5A DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD06N10-225L-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 5V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-252
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: Q5396740VS; SUD06N10-225L-E3; SUD06N10-225L-E3TR

Notes
a.
b.
c.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
SUD06N10-225L
Vishay Siliconix
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
c
c
a
Parameter
g
c
c
c
c
c
b
b
b
b
b
J
= 25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
r
(BR)DSS
I
DS(
DS(on)
t
t
I
C
GS(th)
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
)
C
V
V
I
D
= 25_C)
V
V
DS
DS
V
V
^ 6.5 A, V
GS
DS
DS
GS
GS
I
= 100 V, V
= 100 V, V
F
V
= 50 V, V
= 0 V, V
V
V
= 10 V, I
= 10 V, I
V
V
V
V
V
= 6.5 A, di/dt = 100 A/ms
DS
DS
DS
I
V
Test Condition
GS
GS
V
DD
DD
F
DS
GS
DS
= 6.5 A, V
= 0 V, V
= V
= 100 V, V
= 50 V, R
= 50 V, R
= 0 V, I
= 5 V, V
= 4.5 V, I
,
= 10 V, I
= 15 V, I
GEN
DS
GS
D
D
GS
GS
GS
GS
= 3 A, T
= 3 A, T
, I
= 25 V, F = 1 MHz
= 10 V, R
GS
D
= 0 V, T
= 0 V, T
= 5 V, I
D
GS
GS
= 250 mA
D
L
L
= 250 mA
D
D
GS
= "20 V
= 7.5 W
= 7.5 W
= 1.0 A
= 10 V
= 3 A
= 3 A
= 0 V
,
= 0 V
J
J
D
D
J
J
= 125_C
= 175_C
g
= 125_C
= 175_C
= 6.5 A
= 2.5 W
Min
100
1.0
8.0
Typ
0.160
0.180
240
8.5
0.6
0.7
0.9
42
17
35
2.7
7
8
8
9
S−42350—Rev. B, 20-Dec-04
a
Document Number: 71253
"100
Max
0.200
0.350
0.450
0.225
250
3.0
4.0
8.0
1.3
50
11
12
12
14
60
1
Unit
nC
nA
mA
m
pF
ns
ns
ns
W
W
V
V
A
S
A
V