SI3430DV-T1-GE3 Vishay, SI3430DV-T1-GE3 Datasheet

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... GS TSOP-6 Top V iew 2.85 mm Ordering Information: Si3430DV-T1-E3 (Lead (Pb)-free) Si3430DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle ≤ Continuous Source Current (Diode Conduction) ...

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... Si3430DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

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... S09-0766-Rev. C, 04-May-09 500 400 300 200 100 6 8 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0.4 0.3 0.2 0 °C J 0.0 0.8 1.0 1.2 Si3430DV Vishay Siliconix C iss C rss C oss Drain-to-Source Voltage (V) DS Capacitance 2 100 T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature ...

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... Si3430DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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