SI2328DS-T1-GE3 Vishay, SI2328DS-T1-GE3 Datasheet

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SI2328DS-T1-GE3

Manufacturer Part Number
SI2328DS-T1-GE3
Description
MOSFET N-CH D-S 100V SOT-23
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI2328DS-T1-GE3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.15A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 10V
Power - Max
730mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
N Channel
Continuous Drain Current Id
1.15A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
195mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Power Dissipation Pd
730mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI2328DS-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2328DS-T1-GE3
Manufacturer:
NSC
Quantity:
116
Part Number:
SI2328DS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2328DS-T1-GE3
Quantity:
66 000
Company:
Part Number:
SI2328DS-T1-GE3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71796
S09-0130-Rev. D, 02-Feb-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
100
(V)
a
b
0.250 at V
b
R
DS(on)
J
= 150 °C)
a
GS
(Ω)
Ordering Information: Si2328DS-T1-E3 (Lead (Pb)-free)
= 10 V
N-Channel 100-V (D-S) MOSFET
a
a
A
I
= 25 °C, unless otherwise noted
Si2328DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1.5
Steady State
Steady State
(A)
G
L = 0.1 mH
T
T
T
T
S
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
1
2
Si2328DS (D8)*
*Marking Code
(SOT-23)
Top View
TO-236
FEATURES
• Halogen-free According to IEC 61249-2-21
• 100 % R
Symbol
Symbol
T
R
R
J
Available
TrenchFET
V
V
E
I
I
P
, T
3
DM
I
AS
I
thJA
thJF
GS
DS
AS
D
S
D
stg
D
g
Tested
®
Power MOSFET
Typical
1.25
0.80
130
5 s
1.5
1.2
80
45
- 55 to 150
± 20
100
1.8
0.6
6
6
Steady State
Maximum
1.15
0.92
0.73
0.47
100
170
55
Vishay Siliconix
Si2328DS
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI2328DS-T1-GE3 Summary of contents

Page 1

... Pulse width limited by maximum junction temperature. Document Number: 71796 S09-0130-Rev. D, 02-Feb-09 FEATURES • Halogen-free According to IEC 61249-2-21 I (A) Available D 1.5 • 100 % R Tested g • TrenchFET TO-236 (SOT-23 Top View Si2328DS (D8)* *Marking Code Si2328DS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° 0 ° ...

Page 2

... Si2328DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Document Number: 71796 S09-0130-Rev. D, 02-Feb-09 250 200 150 100 2.5 2.0 1.5 1.0 0.5 0 0.6 0.5 0.4 0.3 0 °C J 0.1 0.0 0.8 1.0 1.2 Si2328DS Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 100 T - Junction Temperature (°C) J On-Resistance vs. Junction Temperature ...

Page 4

... Si2328DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.0 - 0.3 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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