IRF7401 International Rectifier, IRF7401 Datasheet - Page 4

• Manufacturer Part Number: IRF7401
• Description: MOSFET N-CH 20V 8.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7401

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7401

IRF7401
1 0 0
0.1
3 0 0 0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
1 0
5 0 0
1
0.0
0
1
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
V
V
S D
D S
Drain-to-Source Voltage
C
C
1.0
C
, S ourc e-to-D rain V oltage (V )
iss
o ss
V
C
C
C
rss
, D rain-to-S ourc e V oltage (V )
Forward Voltage
G S
is s
rss
o s s
T = 25 °C
J
= 0 V ,
= C
= C
= C
g s
g d
d s
2.0
+ C
+ C
1 0
T = 15 0°C
gd
g d
f = 1M H z
J
, C
ds
3.0
S H O R T E D
V
G S
= 0 V
4.0
1 0 0
A
A
1 0
100
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
10
1
0
0.1
I
V
D
D S
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
A
J
= 4 .1 A
= 1 6V
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
1 0
Gate-to-Source Voltage
Q , T otal G ate C harge (nC )
DS
°
G
°
, Drain-to-Source Voltage (V)
1
2 0
BY R
DS(on)
FO R TE S T C IR C U IT
3 0
S E E FIG U R E 1 2
10
4 0
100us
1ms
10ms
5 0
100
A