SI4913DY-T1-GE3 Vishay, SI4913DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4913DY-T1-GE3
• Description: MOSFET P-CH D-S 20V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4913DY-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.1A
• Vgs(th) (max) @ Id: 1V @ 500µA
• Gate Charge (qg) @ Vgs: 65nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 9.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4913DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71997.
Document Number: 71997
S09-0870-Rev. D, 18-May-09
0.01
0.1
2
1
10
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4913DY
www.vishay.com
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