SI4340CDY-T1-E3 Vishay, SI4340CDY-T1-E3 Datasheet

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SI4340CDY-T1-E3

Manufacturer Part Number
SI4340CDY-T1-E3
Description
MOSFET N-CH D-S 20V 14-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4340CDY-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.4 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
14.1A, 20A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 10V
Power - Max
3W, 5.4W
Mounting Type
Surface Mount
Package / Case
14-SOIC (0.154", 3.90mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
11.5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
7.7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Configuration
Dual
Resistance Drain-source Rds (on)
0.0094 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V, +/- 16 V
Continuous Drain Current
11.5 A, 15.2 A
Power Dissipation
2 W, 3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4340CDY-T1-E3TR
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W.
Document Number: 68398
S09-2436-Rev. C, 16-Nov-09
Channel-1
Channel-2
Ordering Information: Si4340CDY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
(V)
Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode
D
D
G
G
S
S
S
V
1
1
1
2
2
2
2
C
DS
20
20
= 25 °C.
V
1
2
3
4
5
6
7
(V)
SD
Si4340CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
(V) Diode Forward Voltage
0.0125 at V
0.0095 at V
0.0094 at V
Top View
0.008 at V
SO-14
0.55 V at 2.5 A
R
DS(on)
J
= 150 °C)
b, d
14
13
12
11
10
GS
GS
GS
9
8
GS
(Ω)
= 10 V
= 4.5 V
= 4.5 V
= 10 V
S
S
D
D
D
D
D
1
1
2
2
2
2
2
I
D
14.1
12.2
18.9
20
(A)
a
A
= 25 °C, unless otherwise noted
I
Q
F
Steady State
g
T
T
T
T
T
T
T
T
L = 0.1 mH
T
T
2
(A)
14.1
C
C
C
C
C
9.6
A
A
A
A
A
(Typ.)
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• DC/DC Converters
Symbol
Symbol
T
R
R
J
V
V
E
I
Definition
- Game Stations
- Notebook PC Logic
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
G
1
g
Tested
N-Channel 1
Typ.
®
53
35
MOSFET
Channel-1
Channel-1
Power MOSFET
11.5
D
S
9.2
1.7
1.3
± 20
14.1
11.2
2
1
1
2.5
1.9
20
40
b, c
3
b, c
b, c
b, c
b, c
Max.
62.5
42
- 55 to 150
G
1.25
2
5
Typ.
35
18
Channel-2
Channel-2
15.2
12.2
2.5
1.9
± 16
16.5
3
Vishay Siliconix
4.5
5.4
3.5
20
20
50
b, c
N-Channel 2
b, c
b, c
b, c
b, c
MOSFET
Si4340CDY
Max.
D
S
42
23
2
2
www.vishay.com
Schottky Diode
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI4340CDY-T1-E3

SI4340CDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4340CDY-T1-E3 (Lead (Pb)-free) Si4340CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4340CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... ≅ 9 GEN g Channel-2 t d(off Ω ≅ GEN ° 9 2 Channel 9.2 A, dI/dt = 100 A/µ Channel 2.5 A, dI/dt = 100 A/µ Si4340CDY Vishay Siliconix Min. Typ. Max Ω Ω Ω Ω Ch-1 2.5 Ch-2 4.5 ...

Page 4

... Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.015 0.013 0.011 0.009 0.007 0.005 Drain Current (A) D On-Resistance vs. Drain Current 11 Total Gate Charge (nC) g Gate Charge www.vishay.com 2.0 2.5 3 ...

Page 5

... Limited DS(on 0 °C BVDSS A Single Pulse Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4340CDY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 5 0 0.001 0.01 0 100 Time (s) Single Pulse Power 100 µ ...

Page 6

... Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...

Page 7

... Single Pulse 0. Document Number: 68398 S09-2436-Rev. C, 16-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4340CDY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...

Page 8

... Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.4 0.8 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.009 0.008 0.007 0.006 GS 0.005 0.004 Drain Current (A) D On-Resistance vs. Drain Current 15 Total Gate Charge (nC) g Gate Charge www.vishay.com 1.6 2.0 ...

Page 9

... Limited DS(on 0 °C BVDSS A Single Pulse Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4340CDY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0 0.001 0.01 0 100 Time (s) Single Pulse Power 100 µ ...

Page 10

... Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 20 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68398. Document Number: 68398 S09-2436-Rev. C, 16-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4340CDY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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