SI6993DQ-T1-GE3 Vishay, SI6993DQ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI6993DQ-T1-GE3
• Description: MOSFET P-CH D-S 30V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6993DQ-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 48mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6993DQ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72369
S-81221-Rev. B, 02-Jun-08
0.10
0.08
0.06
0.04
0.02
0.00
0.1
30
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 4.7 A
On-Resistance vs. Drain Current
5
= 15 V
0.3
T
3
V
J
V
GS
= 150 °C
SD
Q
= 4.5 V
- Source-to-Drain Voltage (V)
10
g
I
- Total Gate Charge (nC)
D
Gate Charge
0.6
- Drain Current (A)
6
15
0.9
V
9
GS
T
20
J
= 10 V
= 25 °C
1.2
12
25
1.5
30
15
1.60
1.40
1.20
1.00
0.80
0.60
2000
1600
1200
0.15
0.12
0.09
0.06
0.03
0.00
800
400
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
C
= 4.7 A
rss
= 10 V
5
2
T
0
V
V
J
GS
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
10
25
Capacitance
4
C
oss
I
D
C
50
15
= 4.7 A
iss
Vishay Siliconix
75
6
Si6993DQ
20
100
www.vishay.com
8
25
125
150
30
10
3