SI7923DN-T1-GE3 Vishay, SI7923DN-T1-GE3 Datasheet - Page 3
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SI7923DN-T1-GE3
Manufacturer Part Number
SI7923DN-T1-GE3
Description
MOSFET P-CH D-S 30V 1212-8 PPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7923DN-T1-E3.pdf
(6 pages)
Specifications of SI7923DN-T1-GE3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 6.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
6.4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
75mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7923DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7923DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
71 440
Part Number:
SI7923DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72622
S-83050-Rev. C, 29-Dec-08
0.12
0.10
0.08
0.06
0.04
0.02
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
V
I
D
GS
DS
On-Resistance vs. Drain Current
0.2
= 6.4 A
= 4.5 V
= 10 V
4
3
V
SD
Q
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
I
T
D
J
- Drain Current (A)
Gate Charge
= 150 °C
6
8
0.6
12
9
0.8
V
GS
= 10 V
T
16
12
J
1.0
= 25 °C
20
15
1.2
1200
1000
0.12
0.09
0.06
0.03
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
rss
GS
= 6.4 A
5
2
= 4.5 V
V
T
V
GS
0
J
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
10
oss
Capacitance
25
4
I
50
D
Vishay Siliconix
15
= 6.4 A
C
6
iss
75
Si7923DN
20
www.vishay.com
100
8
25
125
150
10
30
3