SI7923DN-T1-GE3 Vishay, SI7923DN-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7923DN-T1-GE3
• Description: MOSFET P-CH D-S 30V 1212-8 PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7923DN-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 6.4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7923DN-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72622
S-83050-Rev. C, 29-Dec-08
0.12
0.10
0.08
0.06
0.04
0.02
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
V
I
D
GS
DS
On-Resistance vs. Drain Current
0.2
= 6.4 A
= 4.5 V
= 10 V
4
3
V
SD
Q
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
0.4
I
T
D
J
- Drain Current (A)
Gate Charge
= 150 °C
6
8
0.6
12
9
0.8
V
GS
= 10 V
T
16
12
J
1.0
= 25 °C
20
15
1.2
1200
1000
0.12
0.09
0.06
0.03
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
rss
GS
= 6.4 A
5
2
= 4.5 V
V
T
V
GS
0
J
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
10
oss
Capacitance
25
4
I
50
D
Vishay Siliconix
15
= 6.4 A
C
6
iss
75
Si7923DN
20
www.vishay.com
100
8
25
125
150
10
30
3