SI4948BEY-T1-GE3 Vishay, SI4948BEY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4948BEY-T1-GE3
• Description: MOSFET P-CH D-S 60V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4948BEY-T1-GE3

• Module Configuration: Dual
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Power Dissipation: RoHS Compliant
• Continuous Drain Current Id: -2.4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4948BEY-T1-GE3TR

Si4948BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10 -
- 25
0.05
Duty Cycle = 0.5
0.02
4
0.2
0.1
I
D
0
= 250 µA
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
Single Pulse
3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
100
0.01
100
0.1
10 -
10
1
0.1
2
125
* V
Safe Operating Area, Junction-to-Case
GS
by R
Limited
Limited
I
> minimum V
150
D(on)
V
DS
DS(on)*
Square Wave Pulse Duration (s)
Single Pulse
- Drain-to-Source Voltage (V)
T
10 -
A
1
= 25 °C
1
GS
at which R
BVDSS Limited
I
DM
DS(on)
10
50
40
30
20
10
Limited
1
0
10 -
is specified
3
10 -
2
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10 -
P
DM
JM
1
-
Time (s)
T
t
A
1
S09-1002-Rev. B, 01-Jun-09
= P
t
1
2
Document Number: 72847
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 85 °C/W
100
600
600