SI4910DY-T1-GE3 Vishay, SI4910DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4910DY-T1-GE3
• Description: MOSFET N-CH D-S 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4910DY-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 855pF @ 20V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4910DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73699
S09-0540-Rev. B, 06-Apr-09
0.030
0.028
0.026
0.024
0.022
0.020
0.018
20
16
12
10
8
4
0
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0.0
0.0
0
I
D
= 5 A
V
GS
0.5
4.4
V
4
= 4.5 V
DS
V
Q
Output Characteristics
DS
g
– Drain-to-Source Voltage (V)
I
= 20 V
D
– Total Gate Charge (nC)
V
V
GS
GS
– Drain Current (A)
Gate Charge
1.0
8.8
8
= 10 V thru 3 V
= 10 V
V
DS
= 10 V
13.2
1.5
12
V
DS
= 30 V
2 V
17.6
2.0
16
22.0
2.5
20
1400
1120
840
560
280
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.7
1.4
1.1
0.8
0.5
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
I
D
- 25
= 5 A
0.5
V
V
8
DS
GS
T
Transfer Characteristics
T
J
0
C
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
= 125 C
C
1.0
rss
25 C
Capacitance
25
16
C
1.5
V
50
Vishay Siliconix
iss
GS
C
oss
= 4.5 V
24
75
Si4910DY
2.0
V
- 55 C
www.vishay.com
GS
100
= 10 V
32
2.5
125
150
3.0
40
3