SI1035X-T1-GE3 Vishay, SI1035X-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI1035X-T1-GE3
• Description: MOSFET N/P-CH 20V SC-89
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1035X-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 145mA
• Vgs(th) (max) @ Id: 400mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 180mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1035X-T1-GE3TR

Si1035X
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (T
www.vishay.com
4
1000
- 0.1
- 0.2
- 0.3
100
0.3
0.2
0.1
0.0
10
1
- 50
0.0
Threshold Voltage Variance vs. Temperature
T
Source-Drain Diode Forward Voltage
- 25
0.2
J
= 25 °C
V
SD
T
0.4
J
0
-
T
= 125 °C
S
J
o
- Temperature (°C)
u
c r
0.6
25
e
t -
- o
D
a r
I
T
D
0.8
50
J
n i
= 0.25 mA
= 50 °C
V
o
a t l
7
6
5
4
3
2
1
0
- 50
1.0
g
75
e
(
) V
- 25
100
1.2
BV
125
1.4
0
GSS
T
J
- Temperature (°C)
A
vs. Temperature
25
= 25 °C, unless otherwise noted)
50
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
- 50
0
100
On-Resistance vs. Gate-to-Source Voltage
- 25
125
1
V
V
GS
GS
0
I
- Gate-to-Source Voltage (V)
GSS
= 2.8 V
T
I
2
D
J
I
D
= 200 mA
- Temperature (°C)
vs. Temperature
= 175 mA
25
S10-2544-Rev. C, 08-Nov-10
3
Document Number: 71426
50
4
75
5
100
125
6