ALD1103SBL Advanced Linear Devices Inc, ALD1103SBL Datasheet - Page 2

• Manufacturer Part Number: ALD1103SBL
• Description: MOSFET 2N+2P 13.2V 14-SOIC
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1103SBL

• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Fet Type: 2 N and 2 P-Channel (H-Bridge)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 10µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Quad
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 75 Ohms, 270 Ohms
• Forward Transconductance Gfs (max / Min): 0.013 S, 0.004 S
• Drain-source Breakdown Voltage: 13.2 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: + 40 mA, - 16 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1009

ALD1103
Gate Threshold V
Voltage
Offset Voltage
V
Gate Threshold
Temperature
Drift
On Drain
Current
Trans-.
conductance
Mismatch
Output
Conductance
Drain Source
ON Resistance
Drain Source
ON Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain
Current
Gate Leakage
Current
Input
Capacitance
OPERATING ELECTRICAL CHARACTERISTICS
T
Parameter
GS1
A
= 25 C unless otherwise specified
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
- V
GS2
I
Symbol Min
V
TC
I
G
G
R
BV
DS(OFF)
I
C
R
DS (ON)
GSS
G
T
OS
DS(ON)
ISS
fs
OS
DS(ON)
VT
fs
DSS
0.4
25
12
5
N - Channel
GS
DS
-1.2
200
Typ
0.7
0.5
0.5
0.1
40
10
50
1
6
PB, SB package
DB package
Max
1.0
10
75
50
10
10
4
4
mV/ C
Unit
V
mV
mA
mmho
%
%
V
nA
pA
nA
pF
mho
A
Advanced Linear Devices
I
I
V
V
V
V
V
I
V
T
V
T
DS
DS
DS
A
A
GS
DS
DS
DS
DS
DS
DS
= 125 C
= 125 C
= 10 A V
= 100 A V
= 10 A V
Conditions
= 5V I
= 5V I
= 0.1V V
= 0.1V V
=12V I
= 0V V
= V
Test
DS
DS
DS
= 5V
GS
GS
GS
GS
= 10mA
GS
GS
= 10mA
GS
= 0V
=12V
= V
=0V
= 5V
= 5V
= V
DS
DS
-0.4
Min
-12
-8
2
P - Channel
-0.7
-1.3
500
180
Typ
-16
0.5
0.5
0.1
4
1
6
Max
-1.2
270
10
50
10
10
4
4
mV/ C
Unit
V
mV
mA
mmho
%
%
V
nA
pA
nA
pF
mho
A
I
I
V
V
V
V
V
I
V
T
V
T
DS
DS
DS
A
A
GS
DS
DS
DS
DS
DS
DS
-55 C to +125 C
-65 C to +150 C
= 125 C
= 125 C
Conditions
= -10 A V
= -100 A V
= -10 A V
= -5V I
= -5V I
= -0.1V V
= -0.1V V
= -12V V
= 0V V
= V
0 C to +70 C
Test
DS
500 mW
= -5V
+260 C
DS
DS
GS
GS
13.2V
13.2V
GS
GS
= -10mA
GS
GS
= -10mA
GS
=-12V
=0V
= 0V
= V
= -5V
= -5V
= V
DS
2
DS