ALD110804PCL Advanced Linear Devices Inc, ALD110804PCL Datasheet

ALD110804PCL

Manufacturer Part Number

ALD110804PCL

Description

MOSFET N-CH 10.6V QUAD 16PDIP

Manufacturer

Advanced Linear Devices Inc

Series

EPAD®r

Datasheet

1.ALD110904PAL.pdf (11 pages)

Specifications of ALD110804PCL

Package / Case

16-DIP (0.300", 7.62mm)

Fet Type

4 N-Channel (H-Bridge)

Fet Feature

Standard

Drain To Source Voltage (vdss)

10.6V

Vgs(th) (max) @ Id

420mV @ 1µA

Power - Max

500mW

Mounting Type

Through Hole

Minimum Operating Temperature

0 C

Configuration

Quad

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

500 Ohm (Typ) @ 4.4 V

Forward Transconductance Gfs (max / Min)

0.0014 S

Drain-source Breakdown Voltage

10.6 V

Gate-source Breakdown Voltage

10.6 V

Continuous Drain Current

12 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1022

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* Contact factory for industrial temp. range or user-specified threshold voltage values.

GENERAL DESCRIPTION

ALD110804/ALD110904 are monolithic quad/dual enhancement mode N-

Channel MOSFETS matched at the factory using ALD’s proven EPAD®

CMOS technology. These devices are intended for low voltage, small sig-

nal applications. The ALD110804/ALD110904 MOSFETS are designed

and built for exceptional device electrical characteristics matching. Since

these devices are on the same monolithic chip, they also exhibit excellent

tempco tracking characteristics. They are versatile circuit elements useful

as design components for a broad range of analog applications, such as

basic building blocks for current sources, differential amplifier input stages,

transmission gates, and multiplexer applications. For most applications,

connect the V - and N/C pins to the most negative voltage in the system

and the V + pin to the most positive voltage. All other pins must have volt-

ages within these voltage limits.

The ALD110804/ALD110904 devices are built for minimum offset voltage

and differential thermal response, and they are suited for switching and

amplifying applications in <+0.1V to +10V systems where low input bias

current, low input capacitance and fast switching speed are desired, as

these devices exhibit well controlled turn-off and sub-threshold character-

istics and can be biased and operated in the sub-threshold region. Since

these are MOSFET devices, they feature very large (almost infinite) cur-

rent gain in a low frequency, or near DC, operating environment.

The ALD110804/ALD110904 are suitable for use in very low operating

voltage or very low power (nanowatt), precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result from extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 30pA at room temperature. For example, DC beta of the de-

vice at a drain current of 3mA and input leakage current of 30pA at 25°C

is = 3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Precision Gate Threshold Voltage of +0.40V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

ALD110804SCL ALD110804PCL

ORDERING INFORMATION

GS(th)

16-Pin

SOIC

Package

match (V

0°C to +70°C

INEAR

DVANCED

EVICES,

Operating Temperature Range*

Plastic Dip

) to 10mV

Package

16-Pin

NC.

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

(“L” suffix for lead free version)

Ω typical

GS(th)

temperature coefficient

ALD110904SAL ALD110904PAL

Package

8-Pin

SOIC

0°C to +70°C

MATCHED PAIR MOSFET ARRAY

Package

8-Pin

Plastic Dip

www.aldinc.com

APPLICATIONS

• Ultra low power (nanowatt) analog and digital

• Ultra low operating voltage(<0.40V) circuits

• Sub-threshold biased and operated circuits

• Precision current mirrors and current sources

• Nano-Amp current sources

• High impedance resistor simulators

• Capacitive probes and sensor interfaces

• Differential amplifier input stages

• Discrete Voltage comparators and level shifters

• Voltage bias circuits

• Sample and Hold circuits

• Analog and digital inverters

• Charge detectors and charge integrators

• Source followers and High Impedance buffers

• Current multipliers

• Discrete Analog switches / multiplexers

PIN CONFIGURATION

circuits

N/C*

*N/C pins are internally connected.

V -

SAL, PAL PACKAGES

SCL, PCL PACKAGES

ALD110904

Connect to V-

M 1

M 4

ALD110804

ALD110804/ALD110904

M 2

M 3

M 2

V -

V GS(th) = +0.40V

V -

N/C*

V -

N/C*

EPAD

Related parts for ALD110804PCL

ALD110804PCL Summary of contents

Page 1

... SOIC Plastic Dip Package Package ALD110804SCL ALD110804PCL * Contact factory for industrial temp. range or user-specified threshold voltage values. Rev 2.0 ©2010 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 MATCHED PAIR MOSFET ARRAY temperature coefficient 0° ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-Source voltage Gate-Source voltage Power dissipation Operating temperature range SCL, PCL, SAL, PAL package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS + GND T A ...

Page 3

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. ALD’s Electrically Programmable Analog Device (EPAD) ...

Page 4

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY (cont.) SUB-THRESHOLD REGION OF OPERATION Low voltage systems, namely those operating at 5V, 3.3V or less, typically require MOSFETs that have threshold voltage less. The threshold, or turn-on, voltage ...

Page 5

ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx MOSFET FAMILY TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS +25° DRAIN-SOURCE ON VOLTAGE (V) FORWARD TRANSFER CHARACTERISTICS 25° +10V DS V GS(TH) ...

Page 6

ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx MOSFET FAMILY TYPICAL PERFORMANCE CHARACTERISTICS DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 5 -55°C 4 -25°C 3 0° GS(TH GS(TH) V GS(TH GS(TH) +2 GATE AND DRAIN SOURCE VOLTAGE ...

Page 7

ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx MOSFET FAMILY TYPICAL PERFORMANCE CHARACTERISTICS DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT 5 -55°C ≤ T ≤ +125°C A 2 100 DRAIN SOURCE ON CURRENT (µA) ZERO TEMPERETURE COEFFICIENT ...

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ALD110804PCL Advanced Linear Devices Inc, ALD110804PCL Datasheet

ALD110804PCL

Specifications of ALD110804PCL

Related parts for ALD110804PCL

ALD110804PCL Summary of contents

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