ALD114913SAL Advanced Linear Devices Inc, ALD114913SAL Datasheet - Page 11

• Manufacturer Part Number: ALD114913SAL
• Description: MOSFET N-CH 10.6V DUAL 8SOIC
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD114913SAL

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Depletion Mode
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 1.26V @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohm (Typ) @ 2.7 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1066

ALD114813/ALD114913
c
S
b
b
1
e
1
D
ø
e
A
E
A 2
1
PDIP-8 PACKAGE DRAWING
L
A
E 1
8 Pin Plastic DIP Package
Advanced Linear Devices
Dim
D-8
S-8
A
A
b
E
e
A
E
b
c
e
L
ø
1
1
1
1
2
3.81
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
Min
0°
Millimeters
11.68
Max
5.08
1.27
2.03
1.65
0.51
0.30
7.11
8.26
2.79
7.87
3.81
2.03
15°
0.105
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
Min
0°
Inches
0.200
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
11 of 11
Max
15°