ALD114913PAL Advanced Linear Devices Inc, ALD114913PAL Datasheet - Page 2

• Manufacturer Part Number: ALD114913PAL
• Description: MOSFET N-CH 10.6V DUAL 8PDIP
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD114913PAL

• Package / Case: 8-DIP (0.300", 7.62mm)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Depletion Mode
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 1.26V @ 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohm (Typ) @ 2.7 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1065

ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V- = GND T A = 25
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Notes:
ALD114813/ALD114913
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Parameter
1
Consists of junction leakage currents
1
V
V
GS
DS
1
°
V GS(th)
V OS
TC VOS
TC VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
R DS (ON)
∆R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
C unless otherwise specified
Symbol
-1.34
Min
10
Advanced Linear Devices
ALD114813/ALD114913
-1.30
+1.6
12.0
-1.7
500
0.0
3.0
1.4
1.8
1.3
0.5
2.5
0.1
Typ
68
10
10
10
60
7
5
7
3
-1.26
400
200
Max
20
4
1
V
mV
µV/ °C
mV/ °C
mA
mmho
%
µmho
Ω
KΩ
%
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
Unit
-65°C to +150°C
0°C to +70°C
500 mW
+260°C
I DS =1µA, V DS = 0.1V
I DS =1µA
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = +8.2 V, V DS = +5V
V GS = +2.7V, V DS = +5V
V GS = +2.7V
V DS = +7.7V
V GS =+2.7V
V DS = +7.7V
V DS = 0.1V
V GS = +2.7V
V DS = 0.1V
V GS = +0.0V
I DS = 1.0µA
V GS = -2.3V
V GS =-2.3V, V DS =+5V
T A = 125°C
V DS = 0V, V GS = +5V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
10.6V
10.6V
Test Conditions
2 of 11