ALD114904SAL Advanced Linear Devices Inc, ALD114904SAL Datasheet - Page 2

• Manufacturer Part Number: ALD114904SAL
• Description: MOSFET N-CH 10.6V DUAL 8SOIC
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD114904SAL

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Depletion Mode
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 360mV @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohms
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1064

ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V- = GND T A = 25
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Notes:
ALD114804/ALD114804A/ALD114904/ALD114904A
Gate Threshold Voltage
Offset Voltage
V GS1 -V GS2
V GS1 -V GS2 Tempco
GateThreshold Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Input Capacitance
Parameter
1
Consists of junction leakage currents
1
V
V
GS
DS
1
V GS(th)
V OS
∆V OS
∆V GS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
R DS (ON)
∆R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
Symbol
°
C unless otherwise specified
ALD114804A / ALD114904A ALD114804 / ALD114904
Min
-0.42
10
Typ
-0.40
+1.6
12.0
-1.7
500
0.0
3.0
1.4
1.8
5.4
0.5
2.5
0.1
Advanced Linear Devices
68
10
10
10
10
60
2
5
3
-0.38
Max
400
200
5
4
1
-0.44
Min
10
-0.40
+1.6
12.0
Typ
-1.7
500
0.0
3.0
1.4
1.8
5.4
0.5
2.5
0.1
68
10
10
10
10
60
7
5
3
-0.36
Max
400
200
20
4
1
-65°C to +150°C
Unit
V
mV
µV/ °C
mV/ °C
%
Ω
KΩ
%
%
V
nA
nA
ns
ns
mA
mmho
µmho
pA
pF
pF
dB
pA
0°C to +70°C
500 mW
+260°C
Test Condition
I DS =1µA, V DS = 0.1V
I DS =1µA
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = +9.1V, V DS = +5V
V GS = +3.6V, V DS = +5V
V GS =+3.6 V
V DS = +8.6V
VGS =+3.6V
V DS = +8.6V
V DS = 0.1V
VGS = +3.6V
V DS = 0.1V
V GS = +0.0V
I DS = 1.0µA
V GS = -1.4V
V GS = -1.4V, V DS =+5V
T A = 125°C
V DS = 0V, V GS = +5V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
10.6V
10.6V
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