ALD110908SAL Advanced Linear Devices Inc, ALD110908SAL Datasheet - Page 2

• Manufacturer Part Number: ALD110908SAL
• Description: MOSFET N-CH 10.6V DUAL 8SOIC
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD110908SAL

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 820mV @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohm (Typ) @ 4.8 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1041

ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = GND T A = 25
CAUTION:
Notes:
ALD110808/ALD110808A/ALD110908/ALD110908A
Gate Threshold Voltage
Offset Voltage
V GS1 -V GS2
GateThreshold Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current1
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
V GS1 -V GS2 Tempco
Parameter
1
Consists of junction leakage currents
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
V
V
GS
DS
1
V GS(th)
V OS
∆V OS
∆V GS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
°
Symbol
C unless otherwise specified
ALD110808A / ALD110908A ALD110808/ ALD110908
Min
0.78
10
Typ
+1.6
0.80
12.0
-1.7
500
0.0
3.0
1.4
1.8
0.5
2.5
0.1
Advanced Linear Devices
68
10
10
10
60
1
5
3
Max
0.82
400
200
2
4
1
Min
0.78
10
Typ
+1.6
0.80
12.0
-1.7
500
0.0
3.0
1.4
1.8
0.5
2.5
0.1
68
10
10
10
60
3
5
3
Max
0.82
400
200
10
4
1
-65°C to +150°C
Unit
mV
µV/ °C
mV/ °C
mA
mmho
%
µmho
Ω
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
V
0°C to +70°C
500 mW
+260°C
Test Condition
I DS =1µA, V DS = 0.1V
I DS =1µA
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = +10.3V, V DS = +5V
V GS = +4.8V, V DS = +5V
V GS = +4.8V
V DS = +9.8V
V GS =+4.8V
V DS = +9.8V
V DS = 0.1V
V GS = +4.8V
I DS = 1.0µA
V GS = -0.2V
V GS = -0.2V
V DS = 5V, T A = 125°C
V DS = 0V, V GS = 5V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
10.6V
10.6V
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