ALD1101SAL Advanced Linear Devices Inc, ALD1101SAL Datasheet - Page 2

• Manufacturer Part Number: ALD1101SAL
• Description: MOSFET 2N-CH 13.2V 40MA 8SOIC
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1101SAL

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 10µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Other names: 1014-1003

ALD1101A/ALD1101B
ALD1101
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
T
Transconductance G
A
Parameter
Gate Threshold
Voltage
Offset Voltage
V
Gate Threshold
Temperature Drift
On Drain Current
Mismatch
Output
Conductance
Drain Source
ON Resistance
Drain Source
ON Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain Current
Gate Leakage
Current
Input
Capacitance
GS1
= 25 C unless otherwise specified
- V
GS2
Symbol
V
V
TC
I
G
R
BV
I
I
C
DS (ON)
DS(OFF)
GSS
T
OS
G
DS(ON)
R
ISS
fs
OS
VT
DS(ON)
DSS
fs
GS
DS
Min
0.4
25
12
PA, SA package
DA package
5
ALD 1101A
Typ
-1.2
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
75
50
10
10
2
4
4
Advanced Linear Devices
Min
0.4
25
12
ALD1101B
5
Typ
-1.2
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
75
50
10
10
5
4
4
Min
0.4
25
12
5
ALD1101
-1.2
Typ
200
0.7
0.5
0.5
0.1
40
10
50
1
6
Max
1.0
10
75
50
10
10
4
4
Unit
V
mV
mV/ C
mA
mmho
%
%
V
nA
pA
nA
pF
mho
A
I
I
V
V
V
V
V
I
V
T
V
T
DS
DS
DS
A
A
GS
DS
DS
DS
DS
DS
DS
= 125 C
= 125 C
Conditions
= 10 A V
= 100 A V
= 10 A V
= V
= 5V I
= 5V I
= 0.1V V
= 0.1V V
=12V V
=0V V
DS
Test
-55 C to +125 C
-65 C to +150 C
DS
DS
= 5V
GS
GS
0 C to +70 C
GS
GS
= 10mA
GS
GS
= 10mA
GS
=12V
= 0V
=0V
= V
= 5V
= 5V
500 mW
= V
+260 C
DS
13.2V
13.2V
DS
2