RG1005P-3402-W-T1 Susumu, RG1005P-3402-W-T1 Datasheet - Page 10
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RG1005P-3402-W-T1
Manufacturer Part Number
RG1005P-3402-W-T1
Description
RES 34.0K OHM 1/16W .05% 0402
Manufacturer
Susumu
Series
RGr
Datasheet
1.RG1005P-103-D-T10.pdf
(16 pages)
Specifications of RG1005P-3402-W-T1
Resistance (ohms)
34K
Power (watts)
0.063W, 1/16W
Composition
Thin Film
Temperature Coefficient
±25ppm/°C
Tolerance
±0.05%
Size / Dimension
0.039" L x 0.020" W (1.00mm x 0.50mm)
Height
0.014" (0.35mm)
Lead Style
Surface Mount (SMD - SMT)
Package / Case
0402 (1005 Metric)
Resistance In Ohms
34.0K
Case
0402 (1005 metric)
Resistance
34 KOhms
Power Rating
0.03 Watt (1/32 Watt)
Voltage Rating
25 Volts
Operating Temperature Range
- 55 C to + 155 C
Termination Style
SMD/SMT
Dimensions
0.5 mm W x 1 mm L x 0.35 mm H
Product
Precision Resistors Thin Film SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Lead Free Status / Rohs Status
Details
10
Low current noise
●Theoretical background
●Current Noise Features
−Comparison with Thick Film and Thin Film−
Test method: JIS C5202 Fixed Resistor Test Method, Appendix 1 "Method for Measuring Current Noise of Resistors"
High frequency Characteristics
In high frequency, electrons only
move on the surface of the
conductor (skin effect). Thin film
resistors, being literally thin (a
few hundred angstroms), will not
be affected by the skin effect
nor other disturbances such as
resonance or stray inductance
●Frequency Characteristics
The
depends on the materials used
and becomes significant in
lower frequencies. This film
tends to suppress the noise
(see figure below). Therefore,
low current noise thin film chip
resistor is needed for the
application that handles very
low voltage near DC range.
−10
−15
−20
−25
−30
−35
−40
−45
−5
1.2
1.0
0.8
0.6
0.4
0.2
10
5
0
0
1
10Ω
current
SSM Thin Film RG1005
1kΩ
10
10kΩ
noise
Resistance Value, Type
Frequency (MHz)
100kΩ
100
largely
Sample1005 (inch 0402 size) Chip Resistor
10Ω
Thick Film 1005 Clip RES
1kΩ
1,000
In low
frequency
In high
frequency
Electrons move smoothly without
much dispersion that creates noise.
【薄膜】
【Thin Film】
10kΩ
20Ω
51Ω
200Ω
100kΩ
【Thin film】
10,000
●Conversion Chart
of Noise Measurement
0.01
100
0.1
10
0
−60
1.2
1.0
0.8
0.6
0.4
0.2
0
1
−40
−20
Reliability test 10,000Hr<0.1%
dB
0
10
Electron moves randomly creating
noise.
【厚膜】
【Thick film】
20
Frequency (MHz)
【Thick film】
40
Electrical Features Data
100
40
1,000
20Ω
51Ω
200Ω
10,000