MMT08B064T3G ON Semiconductor, MMT08B064T3G Datasheet - Page 2

• Manufacturer Part Number: MMT08B064T3G
• Description: TSPD BIDIRECT 64V 80A SMB
• Manufacturer: ON Semiconductor

Specifications of MMT08B064T3G

• Voltage - Breakover: 77V
• Voltage - Off State: 58V
• Voltage - On State: 3V
• Current - Peak Pulse (8 X 20µs): 250A
• Current - Peak Pulse (10 X 1000µs): 80A
• Current - Hold (ih): 150mA
• Number Of Elements: 1
• Capacitance: 130pF
• Package / Case: DO-214AA, SMB
• Breakover Current Ibo Max: 32 A
• Rated Repetitive Off-state Voltage Vdrm: 58 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Measured under pulse conditions to reduce heating.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
forward and reverse polarities.
Operating Temperature Range Blocking or Conducting State
Overload Junction Temperature − Maximum Conducting State Only
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Breakover Voltage (Both polarities)
Breakover Voltage (Both polarities)
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I
Off State Current (V
Off State Current
On−State Voltage (I
Breakover Current (f = 60 Hz, V
Holding Current (Both polarities) (Note 3)
Critical Rate of Rise of Off−State Voltage
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
I
V
V
V
I
I
V
D1
BO
H
D1
BR
BO
TM
Symbol
, I
(dv/dt = 100 V/ms, I
(+65°C)
(f = 60 Hz, I
R
(+65°C)
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
Both polarities
V
(Linear waveform, V
, V
S
D2
I
= 1.0 kW, t = 0.5 cycle) (Note 3)
= 500 V; I
D2
(f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
SC
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
T
(V
(Initiating Current) = "1.0 A (+65°C)
= 1.0 A(rms), V
T
D1
D2
(BR)
= 1.0 A)
SC
= 50 V) Both polarities
= V
D
= 1.0 A, Vdc = 1000 V)
= Rated V
= 1.0 mA) Both polarities
DM
) Both polarities
DM
Characteristics
OC
Parameter
Characteristic
= 1000 V(rms), R
BR
= 1000 V(rms),
, T
(T
J
Voltage Current Characteristic of TSPD
= 25°C)
J
= 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
S
(Bidirectional Device)
= 1.0 kW)
http://onsemi.com
MMT08B064T3
2
dV
Symbol
Symbol
V
V
(BO)
V
dv/dt
T
T
I
I
I
C
V
T
(BO)
(BO)
(BR)
BO
I
D1
D2
J1
J2
H
O
L
T
/dT
I
+ Current
H
J
I
D1
V
2000
D1
Min
150
130
58
−
−
−
−
−
−
−
−
−
−
−
V
TM
−40 to + 125
I
D2
V
0.054
+ 175
D2
Max
Typ
260
130
91
67
−
−
−
−
−
−
−
−
−
−
−
V
V
(BR)
(BO)
Max
2.0
5.0
3.0
77
80
77
80
−
−
−
−
−
−
−
−
+ Voltage
I
(BO)
V/°C
V/ms
Unit
Unit
mA
mA
°C
°C
°C
mA
pF
V
V
V
V