TISP4300H3LM Bourns Inc., TISP4300H3LM Datasheet - Page 11

• Manufacturer Part Number: TISP4300H3LM
• Description: SURGE SUPP THYRISTOR 230V TO-92
• Manufacturer: Bourns Inc.

Specifications of TISP4300H3LM

• Package / Case: TO-92-2, TO-226AC
• Voltage - Breakover: 300V
• Voltage - Off State: 230V
• Voltage - On State: 3V
• Current - Peak Pulse (8 X 20µs): 300A
• Current - Peak Pulse (10 X 1000µs): 100A
• Current - Hold (ih): 150mA
• Number Of Elements: 1
• Capacitance: 62pF
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The protector characteristic off-state capacitance values are given for d.c. bias voltage, V
values are also given for -100 V. Values for other voltages may be calculated by multiplying the V
in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly
dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be
about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at
-50 V.
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the
line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating
the ring trip circuit.
Figure 10 allows the calculation of the protector V
maximum normal system voltages. The TISP4260H3LM, with a V
100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,
this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an
unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature
when the V
-28 °C. In this example, the TISP4260M3LM will allow normal equipment operation provided that the minimum expected ambient temperature
does not fall below -28 °C.
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard
(JESD51-2, 1995) describes the test environment. This is a 0.0283 m
horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defi nes two test PCBs for surface mount components; one for
packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The LM package measurements used the
smaller 76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal
resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resis-
tance and so can dissipate higher power levels than indicated by the JESD51 values.
NOVEMBER 1997 - REVISED JANUARY 2010
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Capacitance
Normal System Voltage Levels
JESD51 Thermal Measurement Method
TISP4xxxH3LM Overvoltage Protector Series
DRM
has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of
DRM
APPLICATIONS INFORMATION
value at temperatures below 25 °C. The calculated value should not be less than the
DRM
3
of 200 V, can be used for the protection of ring generators producing
(1 ft
3
) cube which contains the test PCB (Printed Circuit Board)
D
, values of 0, -1 V, -2 V and -50 V. Where possible,
D
= 0 capacitance value by the factor given