TISP7080H3SL Bourns Inc., TISP7080H3SL Datasheet - Page 2

• Manufacturer Part Number: TISP7080H3SL
• Description: SURGE SUPP 65V BIDIR 3-SL
• Manufacturer: Bourns Inc.

Specifications of TISP7080H3SL

• Package / Case: Radial - 3 Lead
• Voltage - Breakover: 80V
• Voltage - Off State: 65V
• Voltage - On State: 5V
• Current - Peak Pulse (8 X 20µs): 350A
• Current - Peak Pulse (10 X 1000µs): 100A
• Current - Hold (ih): 150mA
• Number Of Elements: 3
• Capacitance: 140pF
• Breakover Current Ibo Max: 60 A
• Rated Repetitive Off-state Voltage Vdrm: 65 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 5 V
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally
caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.
The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown
clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage
on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current
prevents d.c. latchup as the diverted current subsides.
This TISP3xxxH3SL range consists of twelve voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices
are in a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding cur-
rent values in SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000
TISP3xxxF3SL series is available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure pre-
cise and matched breakover control and are virtually transparent to the system in normal operation.
ITU-T K.20/21 Rating . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
- Single and Simultaneous Impulses
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
Description
How To Order
TISP3xxxH3
Waveshape
10/1000 µs
Device
Device
10/160 µs
10/700 µs
10/560 µs
TISP3xxxH3SL Overvoltage Protector Series
‘3070
‘3080
‘3095
‘3115
‘3125
‘3135
‘3145
‘3180
‘3210
‘3250
‘3290
‘3350
2/10 µs
8/20 µs
V
100
110
120
145
160
190
220
275
GR-1089-CORE
GR-1089-CORE
DRM
58
65
75
90
IEC 61000-4-5
SL (Single-in-Line)
V
ITU-T K.20/21
FCC Part 68
FCC Part 68
FCC Part 68
Standard
Package
V
115
125
135
145
180
210
250
290
350
(BO)
70
80
95
V
I
500
300
250
200
160
100
TSP
A
Carrier
Tube
TISP3xxxH3SL-S
3-Pin Through-Hole Packaging
- Compatible with TO-220AB pin-out
- Low Height..............................................................8.3 mm
Low Differential Capacitance..................................< 67 pF
Order As
SL Package (Top View)
Device Symbol
Customers should verify actual device performance in their specific applications.
.......................................UL Recognized Component
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
R
T
T
Specifications are subject to change without notice.
1
2
3
JANUARY 1999 - REVISED JANUARY 2007
G
SD3XAA
R
MDXXAGA