TISP4070L3BJR Bourns Inc., TISP4070L3BJR Datasheet - Page 3

SURGE SUPP 58V BIDIR DO-214AA

TISP4070L3BJR

Manufacturer Part Number
TISP4070L3BJR
Description
SURGE SUPP 58V BIDIR DO-214AA
Manufacturer
Bourns Inc.
Datasheets

Specifications of TISP4070L3BJR

Package / Case
DO-214AA, SMB
Voltage - Breakover
70V
Voltage - Off State
58V
Voltage - On State
3V
Current - Peak Pulse (8 X 20µs)
300A
Current - Hold (ih)
120mA
Number Of Elements
1
Capacitance
48pF
Breakover Current Ibo Max
13 A
Rated Repetitive Off-state Voltage Vdrm
58 V
Off-state Leakage Current @ Vdrm Idrm
0.005 mA
Forward Voltage Drop
3 V
Mounting Style
SMD/SMT
Current - Peak Pulse (10 X 1000µs)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TISP4070L3BJR
Manufacturer:
BOURNS
Quantity:
240 000
R
NOTE
I
V
V
I
V
I
dv/dt
I
C
Electrical Characteristics for the R and T Terminals, T A = 25
Thermal Characteristics
DRM
(BO)
H
D
(BO)
(BO)
T
θ
off
JA
TISP4xxxL3BJ Overvoltage Protector Series
Junction to free air thermal resistance
Repetitive peak off-
state current
Breakover voltage
Impulse breakover
voltage
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Parameter
Parameter
dv/dt = ±250 V/ms, R
V
dv/dt = ±250 V/ms, R
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I
I
Linear voltage ramp, Maximum ramp value < 0.85V
V
f = 100 kHz, V
f = 100 kHz, V
T
T
D
D
= ±5 A, t
= ±5 A, di/dt = -/+ 30 mA/ms
= V
= ±50 V
DRM
W
= 100 µs
d
d
= 1 V rms,
= 1 V rms,
SOURCE
SOURCE
T
265 mm x 210 mm populated line card,
4-layer PCB, I
EIA/JESD51-3 PCB, I
A
Test Conditions
= 25 °C, (see Note 5)
V
V
V
V
V
V
= 300 Ω
= 300 Ω
D
D
D
D
D
D
= 0
= 1 V
= 5 V
= 0
= 1 V
= 5 V
°
C (Unless Otherwise Noted)
T
Test Conditions
= I
TSM(1000)
Customers should verify actual device performance in their specific applications.
T
= I
DRM
TSM(1000)
, T
A
= 25 °
,
T
T
T
A
A
A
C
= 25 °C
= 85 °C
= 85 °C
‘4070
‘4350
‘4070
‘4350
‘4070
‘4350
Specifications are subject to change without notice.
±120
Min
Min
±40
±5
AUGUST 1999 - REVISED JANUARY 2007
Typ
Typ
40
38
31
26
24
20
52
±350
±359
±250
±350
Max
Max
±10
±70
±78
±10
115
±5
±3
50
48
39
33
30
25
°
kV/µs
C /W
Unit
Unit
mA
mA
µA
µA
pF
V
V
V

Related parts for TISP4070L3BJR