NP0120TAT1G ON Semiconductor, NP0120TAT1G Datasheet - Page 2

• Manufacturer Part Number: NP0120TAT1G
• Description: IC PROTECTOR LOW CAP 12V SOT23-5
• Manufacturer: ON Semiconductor
• Series: NPr

Specifications of NP0120TAT1G

• Voltage - Breakover: 12.5V
• Voltage - Off State: 12V
• Current - Peak Pulse (8 X 20µs): 50A
• Current - Hold (ih): 50mA
• Number Of Elements: 1
• Capacitance: 11pF
• Package / Case: TSOT-23-5, TSOT-5, TSOP-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - On State: -
• Current - Peak Pulse (10 X 1000µs): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NPO120TAT1G

ELECTRICAL CHARACTERISTICS TABLE
Symbol
V
V
IPPS
V
T
ESD
DC
RWM
Co
(BO)
STG
T
BR1
I
I
R
H
J
1
Storage Temperature Range
Operating Junction Temperature Range
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state condition
Breakdown Voltage: The minimum voltage across the
device in or at the breakdown region. Measured at
I
Breakover Voltage: The maximum voltage across the
device in or at the breakover region. Measured at
I
Off−state Current: The dc value of current that results
from the application of the off−state voltage
Holding Current: The minimum current required to
maintain the device in the on−state.
Off−State Capacitance: f = 1.0 MHz, V
V
D Capacitance: f = 1.0 MHz, V
V
Peak Pulse Current: Rated maximum value of peak
impulse pulse current that may be applied. 8x20 ms,
IEC*61000*4*5
Electrostatic Discharge: Rated maximum value of ESD
per IEC−61000−4−2
BR
(BO)
D
D
= −2 Vdc
= | 0 V – Vrwm|
= 1 mA
= 800 mA
d
= 1.0 Vrms,
Rating
(T
A
d
= 25°C unless otherwise noted)
= 1.0 Vrms,
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NP0080TAT1G
NP0120TAT1G
NP0160TAT1G
NP0080TAT1G
NP0120TAT1G
NP0160TAT1G
NP0080TAT1G
NP0120TAT1G
NP0160TAT1G
NP0080TAT1G
NP0120TAT1G
NP0160TAT1G
NP0080TAT1G
NP0120TAT1G
NP0160TAT1G
Contact
Air
12.5
Min
−55
−40
9.5
18
50
Typ
50
15
4
3
3
8
+150
+125
Max
±12
±16
0.5
±8
20
30
40
13
11
11
Unit
mA
mA
pF
pF
kV
°C
°C
V
V
V
A