TB1300M-13-F Diodes Inc, TB1300M-13-F Datasheet - Page 2
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TB1300M-13-F
Manufacturer Part Number
TB1300M-13-F
Description
THYRISTOR PROTECT BIDIR 50A SMB
Manufacturer
Diodes Inc
Datasheet
1.TB2600M-13-F.pdf
(5 pages)
Specifications of TB1300M-13-F
Voltage - Breakover
160V
Voltage - Off State
120V
Voltage - On State
3.5V
Current - Peak Pulse (8 X 20µs)
250A
Current - Peak Pulse (10 X 1000µs)
50A
Current - Hold (ih)
150mA
Number Of Elements
1
Capacitance
90pF
Package / Case
DO-214AA, SMB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TB1300M-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TB1300M-13-F
Manufacturer:
DIODES
Quantity:
45 000
Electrical Characteristics
Notes:
TB0640M - TB3500M
Document number: DS30361 Rev. 9 - 2
Part Number
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/quality/lead_free.html.
2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
3. I
4. Off-state capacitance measured at f = 1.0MHz, 1.0V
exceed 30ms.
H
> (V
L
/R
Repetitive
Maximum
Off-State
V
Voltage
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not
Rated
DRM
120
140
160
190
220
275
320
58
65
75
90
(V)
Symbol
V
I
V
V
Current @
DRM
I
Maximum
I
I
C
DRM
V
Off-State
I
BR
BO
I
PP
Leakage
BO
BR
H
DRM
T
O
V
DRM
5
5
5
5
5
5
5
5
5
5
5
(uA)
@T
A
= 25°C unless otherwise specified
Breakover
Maximum
Voltage
V
BO
130
160
180
220
265
300
350
400
77
88
98
(V)
RMS
I
signal, V
BR
Maximum
www.diodes.com
@ I
On-State
Voltage
V
I
DRM
I
T
T
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
I
I
BO
PP
H
= 1A
(V)
R
2 of 5
I
= 2V
V
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
T
DC
bias.
(mA)
Min
50
50
50
50
50
50
50
50
50
50
50
Breakover
Current
I
V
BO
DRM
(mA)
Max
800
800
800
800
800
800
800
800
800
800
800
V
BR
V
BO
Holding Current
(mA)
V
Min
150
150
150
150
150
150
150
150
150
150
150
Note 3
Note 4
Parameter
I
H
(mA)
Max
800
800
800
800
800
800
800
800
800
800
800
TB0640M - TB3500M
Capacitance
Off-State
Typical
C
O
140
140
140
90
90
90
90
60
60
60
60
(pF)
© Diodes Incorporated
September 2010
Marking
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Code