NCV8674DS50R4G ON Semiconductor, NCV8674DS50R4G Datasheet - Page 2

• Manufacturer Part Number: NCV8674DS50R4G
• Description: IC REG LDO 5.0V D2PAK-4
• Manufacturer: ON Semiconductor

Specifications of NCV8674DS50R4G

• Regulator Topology: Positive Fixed
• Voltage - Output: 5V
• Voltage - Input: Up to 45V
• Voltage - Dropout (typical): 0.3V @ 350mA
• Number Of Regulators: 1
• Current - Output: 350mA
• Current - Limit (min): 350mA
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D⊃2Pak (2 leads + Tab), TO-263AB
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 45 V
• Output Voltage: 5 V
• Output Type: Fixed
• Dropout Voltage (max): 0.5 V at 100 mA
• Output Current: 350 mA
• Line Regulation: 25 mV
• Load Regulation: 35 mV
• Voltage Regulation Accuracy: 2 %
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Reference Voltage: 1.3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and is tested by the following methods:
2. 1 oz., 1 in
PIN FUNCTION DESCRIPTION
OPERATING RANGE
MAXIMUM RATINGS
Thermal Resistance
Junction−to−Ambient (Note 2)
Junction−to−Case
Pin No.
V
Junction Temperature Operating Range
V
V
Storage Temperature
ESD Capability, Human Body Model (Note 1)
ESD Capability, Machine Model (Note 1)
IN
IN
OUT
TAB
ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A 114C)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A 115C)
1
2
3
,
,
DC Input Operating Voltage
DC Voltage
, DC Voltage
2
copper area.
Symbol
GND
V
GND
V
V
OUT
IN
IN
Pin Symbol, Parameter
Parameter
Reference
Rating
1.3 V
Unregulated input voltage; (V
Ground; substrate.
Regulated output voltage; collector of the internal PNP pass transistor.
Ground; substrate and best thermal connection to the die.
Bias Current
Generators
Error
Amp
+
-
Figure 1. Block Diagram
http://onsemi.com
Shutdown
Thermal
OUT
+ 0.5 V) to 45 V.
2
V
Symbol
Symbol
Symbol
V
ESDMIM
V
R
ESDHB
R
T
V
V
T
OUT
Function
qJA
qJC
stg
IN
IN
J
V
OUT
4000
−0.3
Min
−40
Min
−42
−55
200
Min
−
−
+ 0.5 V
V
GND
OUT
+150
+150
Max
Max
Max
+45
+45
+16
4.0
40
−
−
°C/W
°C/W
Unit
Unit
Unit
_C
_C
V
V
V
V
V