AS1360-50-T austriamicrosystems, AS1360-50-T Datasheet - Page 8

• Manufacturer Part Number: AS1360-50-T
• Description: IC LDO 250MA 5.0V SOT23-3
• Manufacturer: austriamicrosystems

Specifications of AS1360-50-T

• Regulator Topology: Positive Fixed
• Voltage - Output: 5V
• Voltage - Input: Up to 20V
• Voltage - Dropout (typical): 0.4V @ 200mA
• Number Of Regulators: 1
• Current - Output: 250mA (Min)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Primary Input Voltage: 6V
• Output Voltage Fixed: 5V
• Dropout Voltage Vdo: 400mV
• No. Of Pins: 3
• Output Current: 250mA
• Operating Temperature Range: -40°C To +85°C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Other names: AS1360-50-TTR

AS1360
Datasheet - A p p l i c a t i o n I n f o r m a t i o n
9 Application Information
Figure 14. AS1360 - Typical Application Diagram
Power Dissipation
Power dissipation (PD) of the AS1360 is the sum of the power dissipated by the p-channel MOSFET and the quiescent
current required to bias the internal voltage reference and the internal power amplifier, and is calculated as:
Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is cal-
culated as:
Total AS1360 power dissipation is calculated as:
The internal quiescent bias current (2µA, typ) is such that the PD(Bias) term of (EQ 3) can be disregarded and the
maximum power dissipation can be estimated using V
between V
Where:
V
V
I
T
P
Junction Temperature
The AS1360 junction temperature (T
perature-to-ambient temperature.
Note: Thermal resistance is estimated to be the junction temperature-to-air temperature R
The AS1360 junction temperature is determined by calculating the rise in T
of T
From (EQ 5), the value of T
Therefore:
www.austriamicrosystems.com/LDOs/AS1360
OUT
AMB(MAX)
IN
OUT
MAX
AMB
= 3.3 to 4.1V
= 1 to 100mA
= 3.0V ±2%
= (4.1V - (3.0V x 0.98)) x 100mA = 116.0mW
:
230°C/W or 335ºC/W (when mounted on 1 square inch of copper). R
air-flow and application specific conditions.
= 55ºC
IN
and V
OUT
*
Tantalum Capacitor
, and multiplying the maximum voltage differential by the maximum output current:
Alkaline
Battery
J
can be calculated as:
+9V
PD(Total) = PD (P-Channel MOSFET) + PD (Bias)
PD (P-Channel MOSFET) = (V
1µF
J
C
) can be determined by first calculating the thermal resistance from junction tem-
PD = (V
IN
*
T
T
J
J
= P
= 116.0mW x 230ºC/W + 55ºC
PD (Bias) = V
IN(MAX)
D(MAX)
V
IN
3
T
V
J
IN(MAX)
GND
AS1360
OUT(MIN)
x R
Revision 1.05
= 81.68ºC
Φ
IN
JA
1
I
and V
GND
+ T
)I
IN
OUT(MAX)
AMB
- V
2
V
OUT(MIN)
OUT
OUT
)I
J
OUT
above T
to obtain a maximum voltage differential
ΦJA
C
1µF
OUT
will vary depending on PCB layout,
*
AMB
, and then adding the increase
V
OUT
ΦJA
= 3.3V
, and is approximately
(EQ 1)
(EQ 2)
(EQ 3)
(EQ 4)
(EQ 5)
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