MCP1825S-3302E/DB Microchip Technology, MCP1825S-3302E/DB Datasheet - Page 20

• Manufacturer Part Number: MCP1825S-3302E/DB
• Description: IC LDO REG 500MA 3.3V SOT223-3
• Manufacturer: Microchip Technology

Specifications of MCP1825S-3302E/DB

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Regulator Topology: Positive Fixed
• Voltage - Output: 3.3V
• Voltage - Input: Up to 6V
• Voltage - Dropout (typical): 0.21V @ 500mA
• Number Of Regulators: 1
• Current - Output: 500mA (Min)
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 6 V
• Output Voltage: 3.3 V
• Output Type: Fixed
• Dropout Voltage (max): 0.35 V at 500 mA
• Output Current: 500 mA
• Line Regulation: 0.05 % / V
• Load Regulation: 0.5 %
• Voltage Regulation Accuracy: 0.5 %
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

MCP1825/MCP1825S
5.0
5.1
The MCP1825/MCP1825S is used for applications that
require high LDO output current and a power good
output.
FIGURE 5-1:
5.1.1
5.2
5.2.1
The internal power dissipation within the MCP1825/
MCP1825S is a function of input voltage, output
voltage,
Equation 5-1 can be used to calculate the internal
power dissipation for the LDO.
EQUATION 5-1:
DS22056B-page 20
Input Voltage Range
Off
3.3V
Where:
Temperature Rise
P
On
V
LDO
V
V
OUT(MIN)
Package Type
P
DROPOUT (max)
V
V
IN(MAX)
V
APPLICATION CIRCUITS/
ISSUES
Typical Application
DISS
Power Calculations
OUT
IN
P
IN
output
=
SHDN
LDO
V
APPLICATION CONDITIONS
POWER DISSIPATION
maximum
IN
minimum
(
4.7 µF
C
V
(typical)
(typical)
1
IN MAX )
(
I
= LDO Pass device internal
= Maximum input voltage
= LDO minimum output voltage
OUT
MCP1825-2.5
1
current
2
power dissipation
Typical Application Circuit.
)
3 4 5
–
GND
=
=
=
=
=
=
=
=
=
V
OUT MIN
and
TO-220-5
3.3V ± 5%
3.465V
3.135V
0.350V
2.5V
500 mA maximum
0.483W
14.2°C
(
V
10 kΩ
quiescent
OUT
)
) I
R
×
1
= 2.5V @ 500 mA
OUT MAX )
PWRGD
(
current.
C
10 µF
2
)
In addition to the LDO pass element power dissipation,
there is power dissipation within the MCP1825/
MCP1825S as a result of quiescent or ground current.
The power dissipation as a result of the ground current
can be calculated using the following equation:
EQUATION 5-2:
The total power dissipated within the MCP1825/
MCP1825S is the sum of the power dissipated in the
LDO pass device and the P(I
CMOS construction, the typical I
MCP1825S is 120 µA. Operating at a maximum V
3.465V results in a power dissipation of 0.12 milli-Watts
for a 2.5V output. For most applications, this is small
compared to the LDO pass device power dissipation
and can be neglected.
The
temperature specified for the MCP1825/MCP1825S is
+125°C
of the MCP1825/MCP1825S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (Rθ
resistance from junction to ambient for the TO-220-5
package is estimated at 29.3°C/W.
EQUATION 5-3:
Where:
T
P
T
J(MAX)
TOTAL
V
AMAX
Rθ
maximum
.
IN(MAX)
P
To estimate the internal junction temperature
JA
T
I(GND
J MAX
I
VIN
(
= Maximum continuous junction
= Total device power dissipation
= Thermal resistance from junction to
= Maximum ambient temperature
P
I GND
temperature
ambient
(
)
= Power dissipation due to the
= Maximum input voltage
= Current flowing in the V
=
continuous
)
P
quiescent current of the LDO
with no LDO output current
(LDO quiescent current)
TOTAL
=
JA
© 2008 Microchip Technology Inc.
V
) of the device. The thermal
IN MAX
GND
(
×
Rθ
GND
) term. Because of the
)
JA
operating
×
+
I
for the MCP1825/
VIN
T
AMAX
IN
junction
pin
IN
of