MCP1824T-3302E/OT Microchip Technology, MCP1824T-3302E/OT Datasheet - Page 22

• Manufacturer Part Number: MCP1824T-3302E/OT
• Description: IC LDO REG 300MA 3.3V SOT23-5
• Manufacturer: Microchip Technology

Specifications of MCP1824T-3302E/OT

• Regulator Topology: Positive Fixed
• Voltage - Output: 3.3V
• Voltage - Input: Up to 6V
• Voltage - Dropout (typical): 0.2V @ 300mA
• Number Of Regulators: 1
• Current - Output: 300mA (Min)
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-5, SC-74A, SOT-25
• Primary Input Voltage: 3.62V
• Output Voltage: 3.3V
• Dropout Voltage Vdo: 200mV
• No. Of Pins: 5
• Output Current: 300mA
• Voltage Regulator Case Style: SOT-23
• Operating Temperature Range: -40°C To +125°C
• Output Voltage Fixed: 3.3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: MCP1824T-3302E/OTTR

MCP1824/MCP1824S
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application.
used to determine the package maximum internal
power dissipation.
EQUATION 5-4:
EQUATION 5-5:
EQUATION 5-6:
DS22070A-page 22
P
P
T
T
T
T
D(MAX)
D(MAX)
A(MAX)
J(RISE)
J(RISE)
J(MAX)
Rθ
Rθ
T
T
JA
JA
A
J
P
D MAX
= Maximum device power dissipation
= maximum continuous junction
= maximum ambient temperature
= Thermal resistance from junction-to-
= Rise in device junction temperature
= Maximum device power dissipation
= Thermal resistance from junction-to-
= Junction temperature
= Rise in device junction temperature
= Ambient temperature
T
(
J RISE
temperature
ambient
(
over the ambient temperature
ambient
over the ambient temperature
T
)
J
=
)
=
=
(
---------------------------------------------------
T
T
J RISE
P
J MAX
(
(
D MAX
(
Rθ
)
)
+
–
)
JA
Equation 5-4
×
T
T
A
A MAX
Rθ
(
JA
)
)
can be
5.3
Internal power dissipation, junction temperature rise,
junction temperature, and maximum power dissipation
is calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
5.3.1
5.3.1.1
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction-to-ambient for the application. The
thermal resistance from junction-to-ambient (Rθ
derived from EIA/JEDEC standards for measuring
thermal resistance. The EIA/JEDEC specification is
JESD51. The standard describes the test method and
board specifications for measuring the thermal
resistance from junction to ambient. The actual thermal
resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application” (DS00792), for more information regarding
this subject.
Package
Input Voltage
LDO Output Voltage and Current
Maximum Ambient Temperature
Internal Power Dissipation
Package Type = SOT-223-5
P
T
LDO(MAX)
T
T
J(RISE)
T
JRISE
JRISE
Typical Application
A(MAX)
V
P
P
I
OUT
OUT
POWER DISSIPATION EXAMPLE
LDO
LDO
V
IN
Device Junction Temperature Rise
= P
= 0.308 W x 62° C/W
= 19.1°C
= 3.3V ± 5%
= 2.5V
= 300 mA
= 60°C
= (V
= ((3.3V x 1.05) – (2.5V x 0.975))
= 0.308 Watts
TOTAL
x 300 mA
IN(MAX)
x Rθ
2007 Microchip Technology Inc.
– V
JA
OUT(MIN)
) x I
OUT(MAX)
JA
) is