BD4833FVE-TR Rohm Semiconductor, BD4833FVE-TR Datasheet - Page 2

• Manufacturer Part Number: BD4833FVE-TR
• Description: IC DETECTOR VOLT 3.3V ODRN 5VSOF
• Manufacturer: Rohm Semiconductor
• Type: Simple Reset/Power-On Resetr

Specifications of BD4833FVE-TR

• Number Of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Voltage - Threshold: 3.3V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 5-VSOF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reset Timeout: -

 Absolute maximum ratings (Ta=25°C)
 Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Detection Voltage
Output Delay Time “LH”
Circuit Current when ON
Circuit Current when OFF
Minimum Operating Voltage
‘Low’Output Current (Nch)
‘High’Output Current (Pch)
(BD49□□G/FVE)
Leak Current when OFF
(BD48□□G/FVE)
Detection Voltage
Temperature coefficient
Hysteresis Voltage
© 2009 ROHM Co., Ltd. All rights reserved.
BD48□□G, BD48□□FVE, BD49□□G, BD49□□FVE series
Power Supply Voltage
Output Voltage
Power
Dissipation
Operating Temperature
Ambient Storage Temperature
www.rohm.com
V
R
C
Designed Guarantee. (Outgoing inspection is not done on all products.)
*1 Guarantee is Ta=25°C.
*2 t
*1 Use above Ta=25°C results in a 5.4mW loss per degree.
*2 Use above Ta=25°C results in a 2.1mW loss per degree.
*3 When a ROHM standard circuit board (70mm×70mm×1.6mm glass epoxy board) is mounted.
S
L
L
: Pull-up resistor to be connected between V
: Capacitor to be connected between V
(T) : Standard Detection Voltage(2.3V to 6.0V, 0.1V step)
PLH
:V
Parameter
DD
=(Vs typ.-0.5V)(Vs typ.+0.5V)
Parameter
Nch Open Drain Output
CMOS Output
SSOP5
VSOF5
Symbol
V
V
Ileak
I
I
t
∆V
I
CC
CC
I
S
V
PLH
OPL
OH
OL
/∆T
S
OUT
S
1
2
and GND.
OUT
R
C
Vout=GND50%
V
V
V
V
V
V
V
V
V
V
Ta=-40°C to 105°C
(Designed Guarantee)
V
DD
DD
OL
OL
DS
DS
DS
DS
DS
DD
DD
L
L
and power supply.
=470kΩ, V
=100pF R
*1*3
*2*3
≤0.4V, Ta=25~105°C, R
≤0.4V, Ta=-40~25°C, R
=V
=V
=0.5V, V
=0.5V, V
=0.5V, V
=0.5V, V
=0.5V, V
=V
=LHL
S
S
DS
-0.2V
+2.0V
=10V
VDD-GND
Symbol
DD
DD
DD
VOUT
DD
DD
Ｌ
Topr
DD
Tstg
Pd
=100kΩ
=4.8V, V
=6.0V, V
=8.0V, V
=1.5V, V
=2.4V, V
*1
=HL
*1
Condition
2/9
V
V
V
V
V
V
V
V
S
S
S
S
S
S
S
S
S
S
S
S
S
=2.3-4.2V
=4.3-5.2V
=5.3-6.0V
=2.3-6.0V
=2.7-6.0V
=2.3-3.1V
=3.2-4.2V
=4.3-5.2V
=5.3-6.0V
=2.3-3.1V
=3.2-4.2V
=4.3-5.2V
=5.3-6.0V
L
L
=470kΩ
=470kΩ
GND-0.3 ~ VDD+0.3
GND-0.3 ~ +10
-40 ~ +105
-55 ~ +125
-0.3 ~ +10
Limits
540
210
*1
*1
*2
V
V
×0.99
S
Min.
0.95
1.20
0.4
2.0
0.7
0.9
1.1
×0.03 V
S
-
-
-
-
-
-
-
-
-
-
-
(T)
V
S
±100
Limit
0.51
0.56
0.60
0.66
0.75
0.80
0.85
0.90
Typ.
1.0
4.0
1.4
1.8
2.2
×0.05 V
Unit
mW
S
°C
°C
-
-
-
-
(T)
V
V
Technical Note
2009.04 - Rev.A
×1.01
V
S
Max.
±360
1.53
1.68
1.80
1.98
2.25
2.40
2.55
2.70
100
0.1
×0.08
S
-
-
-
-
-
-
-
(T)
ppm/°C
Unit
mA
mA
µA
µA
µA
µs
V
V
V